Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy

Kenji Yoshino; Hirosumi Yokoyama; Kouji Maeda; Tetsuo Ikari; Atsuhiko Fukuyama; Paul J. Fons; Akimasa Yamada; Shigeru Niki

doi:10.1063/1.371369

Optical characterizations of CuInSe₂ epitaxial layers grown by molecular beam epitaxy

Kenji Yoshino, Hirosumi Yokoyama, Kouji Maeda, Tetsuo Ikari, Atsuhiko Fukuyama, Paul J. Fons, Akimasa Yamada, Shigeru Niki

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

CuInSe₂ (CIS) films with Cu/In ratios of γ=0.82-1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (V_Cu) and interstitial In (In_i) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films.

Original language	English
Pages (from-to)	4354-4359
Number of pages	6
Journal	Journal of Applied Physics
Volume	86
Issue number	8
DOIs	https://doi.org/10.1063/1.371369
Publication status	Published - 1999 Oct 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy",

abstract = "CuInSe2 (CIS) films with Cu/In ratios of γ=0.82-1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films.",

author = "Kenji Yoshino and Hirosumi Yokoyama and Kouji Maeda and Tetsuo Ikari and Atsuhiko Fukuyama and Fons, {Paul J.} and Akimasa Yamada and Shigeru Niki",

year = "1999",

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doi = "10.1063/1.371369",

language = "English",

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TY - JOUR

T1 - Optical characterizations of CuInSe2 epitaxial layers grown by molecular beam epitaxy

AU - Yoshino, Kenji

AU - Yokoyama, Hirosumi

AU - Maeda, Kouji

AU - Ikari, Tetsuo

AU - Fukuyama, Atsuhiko

AU - Fons, Paul J.

AU - Yamada, Akimasa

AU - Niki, Shigeru

PY - 1999/10/15

Y1 - 1999/10/15

N2 - CuInSe2 (CIS) films with Cu/In ratios of γ=0.82-1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films.

AB - CuInSe2 (CIS) films with Cu/In ratios of γ=0.82-1.79 have been grown on a GaAs (001) substrate by molecular beam epitaxy. Piezoelectric photoacoustic (PPA) measurements were carried out from liquid helium to room temperature to investigate nonradiative carrier recombination processes in comparison with photoluminescence (PL) measurements which directly detected radiative carrier recombination processes. Three PPA signal peaks which corresponded to band gap energies of the CIS (AB and C bands) and the GaAs substrate, were clearly obtained between liquid helium and room temperatures. A free-exciton emission line was observed up to 200 K in the PL spectra. Two additional peaks on intrinsic defects which are Cu vacancy (VCu) and interstitial In (Ini) were observed in the In-rich CIS samples. The PPA measurements were useful in investigating the defect levels and the band gap energy in the CIS/GaAs thin films.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Optical characterizations of CuInSe₂ epitaxial layers grown by molecular beam epitaxy

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