Optical control of charge number in single floating quantum-dot gate in field-effect transistor structure

Masashi Shima, Yoshiki Sakuma, Yoshihiro Sugiyama, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalArticle

Abstract

The optical characteristics of a single floating quantum-dot (QD) gate field-effect transistor memory cell were investigated at 77 K. The channel current, which can detect sensitively the charging of the QD, was saturated via some discrete levels after illuminations by light pulses, and the saturation value increased with the stronger illumination power. It was also found, by comparing the optical writing characteristics for different illumination powers at 77 K with retention characteristics at 120 K, that the discrete current levels observed in the optical characteristics corresponded to the hole number variation in the single QD. These results show that the number of holes stored in a single QD was controlled by changing the illumination power.

Original languageEnglish
Pages (from-to)1930-1932
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number13
DOIs
Publication statusPublished - 2001 Mar 26
Externally publishedYes

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optical control
floating
field effect transistors
illumination
quantum dots
charging
saturation
pulses
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical control of charge number in single floating quantum-dot gate in field-effect transistor structure. / Shima, Masashi; Sakuma, Yoshiki; Sugiyama, Yoshihiro; Awano, Yuji; Yokoyama, Naoki.

In: Applied Physics Letters, Vol. 78, No. 13, 26.03.2001, p. 1930-1932.

Research output: Contribution to journalArticle

Shima, Masashi ; Sakuma, Yoshiki ; Sugiyama, Yoshihiro ; Awano, Yuji ; Yokoyama, Naoki. / Optical control of charge number in single floating quantum-dot gate in field-effect transistor structure. In: Applied Physics Letters. 2001 ; Vol. 78, No. 13. pp. 1930-1932.
@article{61988be08b304fb8b354425b1e3f7eee,
title = "Optical control of charge number in single floating quantum-dot gate in field-effect transistor structure",
abstract = "The optical characteristics of a single floating quantum-dot (QD) gate field-effect transistor memory cell were investigated at 77 K. The channel current, which can detect sensitively the charging of the QD, was saturated via some discrete levels after illuminations by light pulses, and the saturation value increased with the stronger illumination power. It was also found, by comparing the optical writing characteristics for different illumination powers at 77 K with retention characteristics at 120 K, that the discrete current levels observed in the optical characteristics corresponded to the hole number variation in the single QD. These results show that the number of holes stored in a single QD was controlled by changing the illumination power.",
author = "Masashi Shima and Yoshiki Sakuma and Yoshihiro Sugiyama and Yuji Awano and Naoki Yokoyama",
year = "2001",
month = "3",
day = "26",
doi = "10.1063/1.1359139",
language = "English",
volume = "78",
pages = "1930--1932",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Optical control of charge number in single floating quantum-dot gate in field-effect transistor structure

AU - Shima, Masashi

AU - Sakuma, Yoshiki

AU - Sugiyama, Yoshihiro

AU - Awano, Yuji

AU - Yokoyama, Naoki

PY - 2001/3/26

Y1 - 2001/3/26

N2 - The optical characteristics of a single floating quantum-dot (QD) gate field-effect transistor memory cell were investigated at 77 K. The channel current, which can detect sensitively the charging of the QD, was saturated via some discrete levels after illuminations by light pulses, and the saturation value increased with the stronger illumination power. It was also found, by comparing the optical writing characteristics for different illumination powers at 77 K with retention characteristics at 120 K, that the discrete current levels observed in the optical characteristics corresponded to the hole number variation in the single QD. These results show that the number of holes stored in a single QD was controlled by changing the illumination power.

AB - The optical characteristics of a single floating quantum-dot (QD) gate field-effect transistor memory cell were investigated at 77 K. The channel current, which can detect sensitively the charging of the QD, was saturated via some discrete levels after illuminations by light pulses, and the saturation value increased with the stronger illumination power. It was also found, by comparing the optical writing characteristics for different illumination powers at 77 K with retention characteristics at 120 K, that the discrete current levels observed in the optical characteristics corresponded to the hole number variation in the single QD. These results show that the number of holes stored in a single QD was controlled by changing the illumination power.

UR - http://www.scopus.com/inward/record.url?scp=0346511727&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346511727&partnerID=8YFLogxK

U2 - 10.1063/1.1359139

DO - 10.1063/1.1359139

M3 - Article

AN - SCOPUS:0346511727

VL - 78

SP - 1930

EP - 1932

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -