Optical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma

M. Miyauchi, Y. Miyoshi, Z. Lj Petrović, T. Makabe

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this paper we apply computer tomography with optical emission spectroscopy (CT-OES) to study the plasma etching of low-k dielectric SiLKTM which may be viewed as representative of the whole class of organic low-k materials in the way it reacts to plasma treatment. We use a two frequency inductively coupled plasma (ICP) with frequencies of 500 kHz and 13.56 MHz for biasing and for plasma production. The plasma is formed in mixtures of hydrogen and nitrogen. The optical emission is a non-intrusive technique which combined with computer tomography provides ability to control the uniformity of radical production close to the surface and also to observe the beginning and end points of the etching of organic dielectric by observing emission of CN and CH bands. The basic conclusions are that hydrogen is efficient in etching of organic polymer even at low energies while low energy nitrogen radicals form protective layers. As a result, etching in their combination is very anisotropic. If we apply biasing voltages then the etching rates represented by CN emission increase linearly, and without saturation up to 1.4 kV. At the same time there is no threshold, so the kinetics of etching is very different from that in Ar-CF4 mixtures applied for silicon etching.

Original languageEnglish
Pages (from-to)1418-1424
Number of pages7
JournalSolid-State Electronics
Volume51
Issue number10 SPEC. ISS
DOIs
Publication statusPublished - 2007 Oct

Fingerprint

Inductively coupled plasma
light emission
Etching
etching
Tomography
Hydrogen
CN emission
Nitrogen
tomography
Plasmas
nitrogen
Optical emission spectroscopy
Organic polymers
Plasma sources
Plasma etching
optical emission spectroscopy
plasma etching
Silicon
hydrogen
Low-k dielectric

Keywords

  • Inductively coupled plasmas
  • Low-k materials
  • Plasma etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Optical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma. / Miyauchi, M.; Miyoshi, Y.; Petrović, Z. Lj; Makabe, T.

In: Solid-State Electronics, Vol. 51, No. 10 SPEC. ISS, 10.2007, p. 1418-1424.

Research output: Contribution to journalArticle

Miyauchi, M. ; Miyoshi, Y. ; Petrović, Z. Lj ; Makabe, T. / Optical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma. In: Solid-State Electronics. 2007 ; Vol. 51, No. 10 SPEC. ISS. pp. 1418-1424.
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