Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

C. C. Du, T. C. Wei, C. H. Chang, S. L. Lee, M. W. Liang, J. R. Huang, C. H. Wu, A. Shirakura, R. Morisawa, T. Suzuki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.

Original languageEnglish
Pages (from-to)3999-4002
Number of pages4
JournalThin Solid Films
Volume520
Issue number11
DOIs
Publication statusPublished - 2012 Mar 30

Keywords

  • Microcrystalline silicon thin film
  • Optical emission spectroscopy
  • Process control
  • Tandem solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Du, C. C., Wei, T. C., Chang, C. H., Lee, S. L., Liang, M. W., Huang, J. R., Wu, C. H., Shirakura, A., Morisawa, R., & Suzuki, T. (2012). Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films. Thin Solid Films, 520(11), 3999-4002. https://doi.org/10.1016/j.tsf.2011.08.110