Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

C. C. Du, T. C. Wei, C. H. Chang, S. L. Lee, M. W. Liang, J. R. Huang, C. H. Wu, A. Shirakura, R. Morisawa, Tetsuya Suzuki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.

Original languageEnglish
Pages (from-to)3999-4002
Number of pages4
JournalThin Solid Films
Volume520
Issue number11
DOIs
Publication statusPublished - 2012 Mar 30

Fingerprint

Microcrystalline silicon
Optical emission spectroscopy
optical emission spectroscopy
Plasma enhanced chemical vapor deposition
Closed loop systems
Process control
vapor deposition
Film growth
Thin films
feedback control
silicon
thin films
very high frequencies
Silanes
crystallinity
Dilution
Solar cells
Gases
Control systems
silanes

Keywords

  • Microcrystalline silicon thin film
  • Optical emission spectroscopy
  • Process control
  • Tandem solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films. / Du, C. C.; Wei, T. C.; Chang, C. H.; Lee, S. L.; Liang, M. W.; Huang, J. R.; Wu, C. H.; Shirakura, A.; Morisawa, R.; Suzuki, Tetsuya.

In: Thin Solid Films, Vol. 520, No. 11, 30.03.2012, p. 3999-4002.

Research output: Contribution to journalArticle

Du, C. C. ; Wei, T. C. ; Chang, C. H. ; Lee, S. L. ; Liang, M. W. ; Huang, J. R. ; Wu, C. H. ; Shirakura, A. ; Morisawa, R. ; Suzuki, Tetsuya. / Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films. In: Thin Solid Films. 2012 ; Vol. 520, No. 11. pp. 3999-4002.
@article{ac6820f90f3844a2bfb72a6e175d1f69,
title = "Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films",
abstract = "The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5{\%} during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.",
keywords = "Microcrystalline silicon thin film, Optical emission spectroscopy, Process control, Tandem solar cell",
author = "Du, {C. C.} and Wei, {T. C.} and Chang, {C. H.} and Lee, {S. L.} and Liang, {M. W.} and Huang, {J. R.} and Wu, {C. H.} and A. Shirakura and R. Morisawa and Tetsuya Suzuki",
year = "2012",
month = "3",
day = "30",
doi = "10.1016/j.tsf.2011.08.110",
language = "English",
volume = "520",
pages = "3999--4002",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "11",

}

TY - JOUR

T1 - Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

AU - Du, C. C.

AU - Wei, T. C.

AU - Chang, C. H.

AU - Lee, S. L.

AU - Liang, M. W.

AU - Huang, J. R.

AU - Wu, C. H.

AU - Shirakura, A.

AU - Morisawa, R.

AU - Suzuki, Tetsuya

PY - 2012/3/30

Y1 - 2012/3/30

N2 - The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.

AB - The decisive criterion associated with the species emission intensity ratio (Hα/SiH*) which characterizes the crystallinity of microcrystalline silicon (μc-Si) film was found to display an unstable behavior resulting from species concentration variation during μc-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve μc-Si film growth for high efficiency a-Si/μc-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the Hα/SiH* intensity ratio within a variation of 5% during the μc-Si film deposition process. Higher growth rate of μc-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control.

KW - Microcrystalline silicon thin film

KW - Optical emission spectroscopy

KW - Process control

KW - Tandem solar cell

UR - http://www.scopus.com/inward/record.url?scp=84862824383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862824383&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.08.110

DO - 10.1016/j.tsf.2011.08.110

M3 - Article

AN - SCOPUS:84862824383

VL - 520

SP - 3999

EP - 4002

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 11

ER -