Optical Imaging of Defect Density Distribution in Ion-Implanted GaAs using Ultrafast Carrier Dynamics

Yasutaka Fujii, Kohei Horiuchi, Fumihiko Kannari, Muneaki Hase, Masahiro Kitajima

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    By combining time-resolved pump-probe reflectivity measurements with scanning laser microscopy, we demonstrate microscopic two-dimensional (2D) imaging of defect density distribution on a GaAs surface. The carrier lifetime is significantly reduced by the recombination process through defect states introduced by 5-keV He+ ion implantation. Thus, when plotting the probe beam reflectivity at 1 ps after photoexcitation and scanning the probe beam across the GaAs surface at a spatial resolution of 2 μm with a scanning step of 10 μm, we obtain a clear image of defect distribution corresponding to a mask edge pattern placed on the sample during ion implantation. Clearer images can be obtained using longer wavelength probe light.

    Original languageEnglish
    Pages (from-to)184-185
    Number of pages2
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume43
    Issue number1
    DOIs
    Publication statusPublished - 2004 Jan

    Keywords

    • Carrier lifetime
    • Defect profile
    • Femtosecond laser pulse
    • Microscopic reflectometry
    • Pump-probe measurement

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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