Optical Imaging of Defect Density Distribution in Ion-Implanted GaAs using Ultrafast Carrier Dynamics

Yasutaka Fujii, Kohei Horiuchi, Fumihiko Kannari, Muneaki Hase, Masahiro Kitajima

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

By combining time-resolved pump-probe reflectivity measurements with scanning laser microscopy, we demonstrate microscopic two-dimensional (2D) imaging of defect density distribution on a GaAs surface. The carrier lifetime is significantly reduced by the recombination process through defect states introduced by 5-keV He+ ion implantation. Thus, when plotting the probe beam reflectivity at 1 ps after photoexcitation and scanning the probe beam across the GaAs surface at a spatial resolution of 2 μm with a scanning step of 10 μm, we obtain a clear image of defect distribution corresponding to a mask edge pattern placed on the sample during ion implantation. Clearer images can be obtained using longer wavelength probe light.

Original languageEnglish
Pages (from-to)184-185
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number1
DOIs
Publication statusPublished - 2004 Jan

Keywords

  • Carrier lifetime
  • Defect profile
  • Femtosecond laser pulse
  • Microscopic reflectometry
  • Pump-probe measurement

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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