Optical interaction of light with semiconductor quantum confined states at the nanoscale

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Optical probing and manipulation of electron quantum states in semiconductors at the nanoscale are key to developing future nanophotonic devices which are capable of ultrafast and low-power operation (Ohtsu et al. in IEEE J. Sel. Top. Quantum Electron. 8:839, 2002). To optimize device performance and to go far beyond conventional devices based on the far-field optics, the degree to which the electron and light are confined must be properly designed and engineered. This is because while stronger confinement of the electron is lets us use its quantum nature, its interaction with light becomes weaker with reduction of the confinement volume. To maximize their interaction, we need the overlap in scale between confinement volume of electron and that of light. More generally, the spatial profile of the light field should be designed to match that of electron wavefunction in terms of phase as well as amplitude.

Original languageEnglish
Title of host publicationProgress in Nano-Electro-Optics VI
Subtitle of host publicationNano-Optical Probing, Manipulation, Analysis, and Their Theoretical Bases
EditorsMotoichi Ohtsu
Pages1-39
Number of pages39
DOIs
Publication statusPublished - 2008 Jul 3
Externally publishedYes

Publication series

NameSpringer Series in Optical Sciences
Volume139
ISSN (Print)0342-4111
ISSN (Electronic)1556-1534

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Saiki, T. (2008). Optical interaction of light with semiconductor quantum confined states at the nanoscale. In M. Ohtsu (Ed.), Progress in Nano-Electro-Optics VI: Nano-Optical Probing, Manipulation, Analysis, and Their Theoretical Bases (pp. 1-39). (Springer Series in Optical Sciences; Vol. 139). https://doi.org/10.1007/978-3-540-77895-0_1