Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

M. Shima, Y. Sakuma, Y. Sugiyama, Y. Awano, N. Yokoyama

Research output: Contribution to conferencePaper

Abstract

Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.

Original languageEnglish
Pages315-319
Number of pages5
Publication statusPublished - 2000 Dec 1
Externally publishedYes
Event27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: 2000 Oct 22000 Oct 5

Other

Other27th International Symposium on Compound Semiconductors
CountryUnited States
CityMonterey, CA
Period00/10/200/10/5

ASJC Scopus subject areas

  • Engineering(all)

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    Shima, M., Sakuma, Y., Sugiyama, Y., Awano, Y., & Yokoyama, N. (2000). Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell. 315-319. Paper presented at 27th International Symposium on Compound Semiconductors, Monterey, CA, United States.