Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

M. Shima, Y. Sakuma, Y. Sugiyama, Yuji Awano, N. Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
Pages315-319
Number of pages5
Publication statusPublished - 2000
Externally publishedYes
Event27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: 2000 Oct 22000 Oct 5

Other

Other27th International Symposium on Compound Semiconductors
CountryUnited States
CityMonterey, CA
Period00/10/200/10/5

Fingerprint

Gates (transistor)
Light modulation
Semiconductor quantum dots
Data storage equipment
Field effect transistors
Optoelectronic devices

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Shima, M., Sakuma, Y., Sugiyama, Y., Awano, Y., & Yokoyama, N. (2000). Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell. In IEEE International Symposium on Compound Semiconductors, Proceedings (pp. 315-319)

Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell. / Shima, M.; Sakuma, Y.; Sugiyama, Y.; Awano, Yuji; Yokoyama, N.

IEEE International Symposium on Compound Semiconductors, Proceedings. 2000. p. 315-319.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shima, M, Sakuma, Y, Sugiyama, Y, Awano, Y & Yokoyama, N 2000, Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell. in IEEE International Symposium on Compound Semiconductors, Proceedings. pp. 315-319, 27th International Symposium on Compound Semiconductors, Monterey, CA, United States, 00/10/2.
Shima M, Sakuma Y, Sugiyama Y, Awano Y, Yokoyama N. Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell. In IEEE International Symposium on Compound Semiconductors, Proceedings. 2000. p. 315-319
Shima, M. ; Sakuma, Y. ; Sugiyama, Y. ; Awano, Yuji ; Yokoyama, N. / Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell. IEEE International Symposium on Compound Semiconductors, Proceedings. 2000. pp. 315-319
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