Optical writing operations of a tetrahedral-shaped recess field-effect transistor memory cell with a single floating quantum dot gave were investigated and compared with its electrical writing operations. Optical modulation of the 1 to 10 holes stored in a single quantum dot was demonstrated, indicating the possibility of designing new high-sensitivity and high-density optoelectronic memories.
|Number of pages||5|
|Publication status||Published - 2000 Dec 1|
|Event||27th International Symposium on Compound Semiconductors - Monterey, CA, United States|
Duration: 2000 Oct 2 → 2000 Oct 5
|Other||27th International Symposium on Compound Semiconductors|
|Period||00/10/2 → 00/10/5|
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