Abstract
An effect of interval layer thickness in closely stacked InAs self-assembled quantum dot (QD) structures on photoluminescence (PL) properties was studied. A drastic decrease in PL line width as narrow as 21 meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. PL from higher order quantized states up to the 4th state were also clearly observed.
| Original language | English |
|---|---|
| Pages (from-to) | 265-268 |
| Number of pages | 4 |
| Journal | Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics |
| Volume | 18 |
| Issue number | 2-4 |
| Publication status | Published - 1997 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1997 International Symposium on Quantum Structures for Photonic Applications, QSPA'97 - Sendai, Jpn Duration: 1997 Mar 6 → 1997 Mar 8 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics