Optical properties of closely stacked self-assembled InAs quantum dot structures

Y. Sugiyama, Y. Nakata, T. Futatsugi, M. Sugawara, Yuji Awano, N. Yokoyama

Research output: Contribution to journalArticle

Abstract

An effect of interval layer thickness in closely stacked InAs self-assembled quantum dot (QD) structures on photoluminescence (PL) properties was studied. A drastic decrease in PL line width as narrow as 21 meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. PL from higher order quantized states up to the 4th state were also clearly observed.

Original languageEnglish
Pages (from-to)265-268
Number of pages4
JournalMolecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics
Volume18
Issue number2-4
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Photoluminescence
Optical properties
quantum dots
photoluminescence
optical properties
intervals
Linewidth
indium arsenide

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Optical properties of closely stacked self-assembled InAs quantum dot structures. / Sugiyama, Y.; Nakata, Y.; Futatsugi, T.; Sugawara, M.; Awano, Yuji; Yokoyama, N.

In: Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics, Vol. 18, No. 2-4, 1997, p. 265-268.

Research output: Contribution to journalArticle

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