Optical properties of closely stacked self-assembled InAs quantum dot structures

Y. Sugiyama, Y. Nakata, T. Futatsugi, M. Sugawara, Yuji Awano, N. Yokoyama

Research output: Contribution to journalConference articlepeer-review


An effect of interval layer thickness in closely stacked InAs self-assembled quantum dot (QD) structures on photoluminescence (PL) properties was studied. A drastic decrease in PL line width as narrow as 21 meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. PL from higher order quantized states up to the 4th state were also clearly observed.

Original languageEnglish
Pages (from-to)265-268
Number of pages4
JournalMolecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics
Issue number2-4
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 International Symposium on Quantum Structures for Photonic Applications, QSPA'97 - Sendai, Jpn
Duration: 1997 Mar 61997 Mar 8

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics


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