Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy

Kenji Yoshino; Naoji Mitani; Tetsuo Ikari; Paul J. Fons; Shigeru Niki; Akimasa Yamada

doi:10.1016/S0927-0248(00)00278-6

Optical properties of high-quality CuGaSe₂ epitaxial layers examined by piezoelectric photoacoustic spectroscopy

Kenji Yoshino, Naoji Mitani, Tetsuo Ikari, Paul J. Fons, Shigeru Niki, Akimasa Yamada

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The piezoelectric photoacoustic (PPA) signals for Cu-rich CuGaSe₂ (CGS) /GaAs (001) epitaxial layer (Cu/Ga = 1.09-2.16) grown by molecular beam epitaxy (MBE) were successfully obtained at liquid-nitrogen temperature. The bandgap energies of CGS (A-band) decreased and GaAs was not almost changed with increasing the Cu/Ga ratios. This phenomenon was very similar to that of free exciton (FE) by photoluminescence (PL) and the lattice parameter c by X-ray diffraction (XRD) measurements.

Original language	English
Pages (from-to)	173-178
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	67
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(00)00278-6
Publication status	Published - 2001 Mar
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/S0927-0248(00)00278-6

Cite this

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title = "Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy",

abstract = "The piezoelectric photoacoustic (PPA) signals for Cu-rich CuGaSe2 (CGS) /GaAs (001) epitaxial layer (Cu/Ga = 1.09-2.16) grown by molecular beam epitaxy (MBE) were successfully obtained at liquid-nitrogen temperature. The bandgap energies of CGS (A-band) decreased and GaAs was not almost changed with increasing the Cu/Ga ratios. This phenomenon was very similar to that of free exciton (FE) by photoluminescence (PL) and the lattice parameter c by X-ray diffraction (XRD) measurements.",

author = "Kenji Yoshino and Naoji Mitani and Tetsuo Ikari and Fons, {Paul J.} and Shigeru Niki and Akimasa Yamada",

year = "2001",

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doi = "10.1016/S0927-0248(00)00278-6",

language = "English",

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journal = "Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "1-4",

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T1 - Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy

AU - Yoshino, Kenji

AU - Mitani, Naoji

AU - Ikari, Tetsuo

AU - Fons, Paul J.

AU - Niki, Shigeru

AU - Yamada, Akimasa

PY - 2001/3

Y1 - 2001/3

N2 - The piezoelectric photoacoustic (PPA) signals for Cu-rich CuGaSe2 (CGS) /GaAs (001) epitaxial layer (Cu/Ga = 1.09-2.16) grown by molecular beam epitaxy (MBE) were successfully obtained at liquid-nitrogen temperature. The bandgap energies of CGS (A-band) decreased and GaAs was not almost changed with increasing the Cu/Ga ratios. This phenomenon was very similar to that of free exciton (FE) by photoluminescence (PL) and the lattice parameter c by X-ray diffraction (XRD) measurements.

AB - The piezoelectric photoacoustic (PPA) signals for Cu-rich CuGaSe2 (CGS) /GaAs (001) epitaxial layer (Cu/Ga = 1.09-2.16) grown by molecular beam epitaxy (MBE) were successfully obtained at liquid-nitrogen temperature. The bandgap energies of CGS (A-band) decreased and GaAs was not almost changed with increasing the Cu/Ga ratios. This phenomenon was very similar to that of free exciton (FE) by photoluminescence (PL) and the lattice parameter c by X-ray diffraction (XRD) measurements.

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SP - 173

EP - 178

JO - Solar Cells

JF - Solar Cells

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