Optical properties of three-dimensional photonic crystals based on III-V semiconductors at infrared to near-infrared wavelengths

Susumu Noda; Noritsugu Yamamoto; Hideaki Kobayashi; Makoto Okano; Katsuhiro Tomoda

doi:10.1063/1.124549

Optical properties of three-dimensional photonic crystals based on III-V semiconductors at infrared to near-infrared wavelengths

Susumu Noda, Noritsugu Yamamoto, Hideaki Kobayashi, Makoto Okano, Katsuhiro Tomoda

Research output: Contribution to journal › Article › peer-review

120 Citations (Scopus)

Abstract

Three-dimensional photonic crystals' optical properties based on III-V semiconductors are investigated. A wafer-fusion technique is utilized to stack the III-V semiconductor stripes to form an asymmetric face-centered-cubic (a-fcc) structure. Results showed that a crystal with eight-stacked layers has a considerable band-gap effect in the transmission spectrum at infrared wavelengths and the band-gap is observed independently of the incident angles. Then, a crystal in the near-infrared wavelengths is constructed with the four-stacked stripe structure and attenuation up to 10 dB is demonstrated.

Original language	English
Pages (from-to)	905-907
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	7
DOIs	https://doi.org/10.1063/1.124549
Publication status	Published - 1999 Aug 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{37e5c6cd82f3426f87c3927fb08147f5,

title = "Optical properties of three-dimensional photonic crystals based on III-V semiconductors at infrared to near-infrared wavelengths",

abstract = "Three-dimensional photonic crystals' optical properties based on III-V semiconductors are investigated. A wafer-fusion technique is utilized to stack the III-V semiconductor stripes to form an asymmetric face-centered-cubic (a-fcc) structure. Results showed that a crystal with eight-stacked layers has a considerable band-gap effect in the transmission spectrum at infrared wavelengths and the band-gap is observed independently of the incident angles. Then, a crystal in the near-infrared wavelengths is constructed with the four-stacked stripe structure and attenuation up to 10 dB is demonstrated.",

author = "Susumu Noda and Noritsugu Yamamoto and Hideaki Kobayashi and Makoto Okano and Katsuhiro Tomoda",

year = "1999",

month = aug,

day = "16",

doi = "10.1063/1.124549",

language = "English",

volume = "75",

pages = "905--907",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Optical properties of three-dimensional photonic crystals based on III-V semiconductors at infrared to near-infrared wavelengths

AU - Noda, Susumu

AU - Yamamoto, Noritsugu

AU - Kobayashi, Hideaki

AU - Okano, Makoto

AU - Tomoda, Katsuhiro

PY - 1999/8/16

Y1 - 1999/8/16

N2 - Three-dimensional photonic crystals' optical properties based on III-V semiconductors are investigated. A wafer-fusion technique is utilized to stack the III-V semiconductor stripes to form an asymmetric face-centered-cubic (a-fcc) structure. Results showed that a crystal with eight-stacked layers has a considerable band-gap effect in the transmission spectrum at infrared wavelengths and the band-gap is observed independently of the incident angles. Then, a crystal in the near-infrared wavelengths is constructed with the four-stacked stripe structure and attenuation up to 10 dB is demonstrated.

AB - Three-dimensional photonic crystals' optical properties based on III-V semiconductors are investigated. A wafer-fusion technique is utilized to stack the III-V semiconductor stripes to form an asymmetric face-centered-cubic (a-fcc) structure. Results showed that a crystal with eight-stacked layers has a considerable band-gap effect in the transmission spectrum at infrared wavelengths and the band-gap is observed independently of the incident angles. Then, a crystal in the near-infrared wavelengths is constructed with the four-stacked stripe structure and attenuation up to 10 dB is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0032621682&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032621682&partnerID=8YFLogxK

U2 - 10.1063/1.124549

DO - 10.1063/1.124549

M3 - Article

AN - SCOPUS:0032621682

SN - 0003-6951

VL - 75

SP - 905

EP - 907

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Optical properties of three-dimensional photonic crystals based on III-V semiconductors at infrared to near-infrared wavelengths

Abstract

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