TY - JOUR
T1 - Optimization of Front Diffusion Profile in Bifacial Interdigitated Back Contact Solar Cell
AU - Sugiura, Takaya
AU - Matsumoto, Satoru
AU - Nakano, Nobuhiko
N1 - Funding Information:
Manuscript received July 22, 2020; revised August 26, 2020 and August 31, 2020; accepted August 31, 2020. Date of publication September 16, 2020; date of current version October 21, 2020. This work was supported in part by VLSI Design and Education Center, The University of Tokyo, in collaboration with Synopsys, Inc., (Corresponding author: Takaya Sugiura.) The authors are with the Department of Electronics and Electrical Engineering, Keio University, Yokohama 223-8522, Japan (e-mail: takaya_sugiura@nak.elec.keio.ac.jp; nobeyama103@outlook.jp; nak@elec. keio.ac.jp).
Publisher Copyright:
© 2011-2012 IEEE.
PY - 2020/11
Y1 - 2020/11
N2 - The diffusion profiles of the front floating emitter (FFE) and front surface field (FSF) in a bifacial interdigitated back contact solar cell are optimized. The optimization results revealed that the FFE and FSF schemes are beneficial for enhancing the cell performance at the front and rear sides, respectively. Lighter doping is particularly better for the FSF scheme, and the FFE scheme requires a large diffusion depth for improving the performance. Increasing the area of the rear emitter boosts the performance of the cell, and an FFE scheme with 90$\%$ rear emitter area is found to be the best design. Quantum efficiency mapping demonstrated that the FFE scheme suppresses the loss at the back surface field region, thereby enhancing the performance of the total cell. The FSF scheme improves the quantum efficiency for the entire region by enhancing the carrier transport in the vertical direction. Furthermore, loss analysis revealed that the FFE scheme suppresses the recombination loss at the maximum power point, which is an important advantage over the FSF scheme.
AB - The diffusion profiles of the front floating emitter (FFE) and front surface field (FSF) in a bifacial interdigitated back contact solar cell are optimized. The optimization results revealed that the FFE and FSF schemes are beneficial for enhancing the cell performance at the front and rear sides, respectively. Lighter doping is particularly better for the FSF scheme, and the FFE scheme requires a large diffusion depth for improving the performance. Increasing the area of the rear emitter boosts the performance of the cell, and an FFE scheme with 90$\%$ rear emitter area is found to be the best design. Quantum efficiency mapping demonstrated that the FFE scheme suppresses the loss at the back surface field region, thereby enhancing the performance of the total cell. The FSF scheme improves the quantum efficiency for the entire region by enhancing the carrier transport in the vertical direction. Furthermore, loss analysis revealed that the FFE scheme suppresses the recombination loss at the maximum power point, which is an important advantage over the FSF scheme.
KW - Bifacial solar cell
KW - device simulation
KW - front floating emitter (FFE)
KW - front surface field (FSF)
KW - interdigitated back contact (IBC)
KW - numerical simulation
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U2 - 10.1109/JPHOTOV.2020.3021669
DO - 10.1109/JPHOTOV.2020.3021669
M3 - Article
AN - SCOPUS:85094848901
SN - 2156-3381
VL - 10
SP - 1582
EP - 1590
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 6
M1 - 9198888
ER -