Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, Y. Hoshi, N. Usami, Kohei M Itoh, S. Oda, T. Kodera, S. Tarucha

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing Rabi frequency. We reveal that this limits control fidelity with a conventional amplitude-modulated microwave pulse below 99.8%. In order to achieve a gate fidelity >99.9%, we introduce a quadrature control method, and validate this approach experimentally by randomized benchmarking. Our finding facilitates realization of an ultra-high-fidelity qubit with electron spins in quantum dots.

Original languageEnglish
Article number54
Journalnpj Quantum Information
Volume4
Issue number1
DOIs
Publication statusPublished - 2018 Dec 1

Fingerprint

frequency shift
Microwaves
microwaves
electron spin
Semiconductor quantum dots
quantum dots
spin resonance
Electrons
Systematic errors
Benchmarking
pulses
quadratures
systematic errors
electric dipoles
retarding
optimization
shift

ASJC Scopus subject areas

  • Computer Science (miscellaneous)
  • Statistical and Nonlinear Physics
  • Computer Networks and Communications
  • Computational Theory and Mathematics

Cite this

Takeda, K., Yoneda, J., Otsuka, T., Nakajima, T., Delbecq, M. R., Allison, G., ... Tarucha, S. (2018). Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift. npj Quantum Information, 4(1), [54]. https://doi.org/10.1038/s41534-018-0105-z

Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift. / Takeda, K.; Yoneda, J.; Otsuka, T.; Nakajima, T.; Delbecq, M. R.; Allison, G.; Hoshi, Y.; Usami, N.; Itoh, Kohei M; Oda, S.; Kodera, T.; Tarucha, S.

In: npj Quantum Information, Vol. 4, No. 1, 54, 01.12.2018.

Research output: Contribution to journalArticle

Takeda, K, Yoneda, J, Otsuka, T, Nakajima, T, Delbecq, MR, Allison, G, Hoshi, Y, Usami, N, Itoh, KM, Oda, S, Kodera, T & Tarucha, S 2018, 'Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift', npj Quantum Information, vol. 4, no. 1, 54. https://doi.org/10.1038/s41534-018-0105-z
Takeda, K. ; Yoneda, J. ; Otsuka, T. ; Nakajima, T. ; Delbecq, M. R. ; Allison, G. ; Hoshi, Y. ; Usami, N. ; Itoh, Kohei M ; Oda, S. ; Kodera, T. ; Tarucha, S. / Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift. In: npj Quantum Information. 2018 ; Vol. 4, No. 1.
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