Abstract
We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 μm at a width of 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.
Original language | English |
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Article number | 241309 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 75 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2007 Jun 29 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics