Abstract
We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 μm at a width of 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.
| Original language | English |
|---|---|
| Article number | 241309 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 75 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2007 Jun 29 |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy. / Romanyuk, K.; Mysliveček, J.; Cherepanov, V.; Sekiguchi, T.; Yoshida, S.; Itoh, Kohei M; Voigtländer, B.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 24, 241309, 29.06.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy
AU - Romanyuk, K.
AU - Mysliveček, J.
AU - Cherepanov, V.
AU - Sekiguchi, T.
AU - Yoshida, S.
AU - Itoh, Kohei M
AU - Voigtländer, B.
PY - 2007/6/29
Y1 - 2007/6/29
N2 - We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 μm at a width of 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.
AB - We demonstrate the formation of Ge nanowire arrays on highly ordered kink-free Si stepped surfaces. The nanowires are grown using Bi surfactant mediated epitaxy. The nanowires are single crystalline and feature minimal kink densities, allowing them to span lengths larger than 1 μm at a width of 4 nm. To achieve desired growth conditions for the formation of such nanowire arrays, we explore a full parameter space of surfactant mediated epitaxy. We show that controlling the surfactant coverage in the surface and/or at step edges modifies the growth properties of surface steps in a decisive way.
UR - http://www.scopus.com/inward/record.url?scp=34347396959&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34347396959&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.75.241309
DO - 10.1103/PhysRevB.75.241309
M3 - Article
AN - SCOPUS:34347396959
VL - 75
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 24
M1 - 241309
ER -