Orientational relationship between cubic boron nitride and hexagonal boron nitride in a thin film synthesized by ion plating

Wei Lie Zhou, Yuichi Ikuhara, Tetsuya Suzuki

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Cubic boron nitride (c-BN) thin films synthesized by the ion-plating method were examined by high-resolution electron microscopy. It was found that the {0002} planes of hexagonal boron nitride (h-BN) at the boundaries of c-BN grains preferred to nucleate almost parallel to {111} planes of c-BN. Cross-sectional observation in the initial stage of growth showed that the c-BN can grow on top of the prismatic planes and the {0001} basal planes of h-BN, keeping the parallelism of the (111)c-BN to (0001)h-BN. A few degrees deviation (∼4°) between h-BN {0002} planes and c-BN {111} planes was frequently found in the film. The nucleation mechanism of c-BN was discussed analogous to that of diamond on graphite.

Original languageEnglish
Pages (from-to)3551
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995
Externally publishedYes

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ion plating
boron nitrides
thin films
electron microscopy
graphite
diamonds
nucleation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Orientational relationship between cubic boron nitride and hexagonal boron nitride in a thin film synthesized by ion plating. / Zhou, Wei Lie; Ikuhara, Yuichi; Suzuki, Tetsuya.

In: Applied Physics Letters, Vol. 67, 1995, p. 3551.

Research output: Contribution to journalArticle

@article{dc9c54287a074fdca36b280c6edfb1a3,
title = "Orientational relationship between cubic boron nitride and hexagonal boron nitride in a thin film synthesized by ion plating",
abstract = "Cubic boron nitride (c-BN) thin films synthesized by the ion-plating method were examined by high-resolution electron microscopy. It was found that the {0002} planes of hexagonal boron nitride (h-BN) at the boundaries of c-BN grains preferred to nucleate almost parallel to {111} planes of c-BN. Cross-sectional observation in the initial stage of growth showed that the c-BN can grow on top of the prismatic planes and the {0001} basal planes of h-BN, keeping the parallelism of the (111)c-BN to (0001)h-BN. A few degrees deviation (∼4°) between h-BN {0002} planes and c-BN {111} planes was frequently found in the film. The nucleation mechanism of c-BN was discussed analogous to that of diamond on graphite.",
author = "Zhou, {Wei Lie} and Yuichi Ikuhara and Tetsuya Suzuki",
year = "1995",
doi = "10.1063/1.114918",
language = "English",
volume = "67",
pages = "3551",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Orientational relationship between cubic boron nitride and hexagonal boron nitride in a thin film synthesized by ion plating

AU - Zhou, Wei Lie

AU - Ikuhara, Yuichi

AU - Suzuki, Tetsuya

PY - 1995

Y1 - 1995

N2 - Cubic boron nitride (c-BN) thin films synthesized by the ion-plating method were examined by high-resolution electron microscopy. It was found that the {0002} planes of hexagonal boron nitride (h-BN) at the boundaries of c-BN grains preferred to nucleate almost parallel to {111} planes of c-BN. Cross-sectional observation in the initial stage of growth showed that the c-BN can grow on top of the prismatic planes and the {0001} basal planes of h-BN, keeping the parallelism of the (111)c-BN to (0001)h-BN. A few degrees deviation (∼4°) between h-BN {0002} planes and c-BN {111} planes was frequently found in the film. The nucleation mechanism of c-BN was discussed analogous to that of diamond on graphite.

AB - Cubic boron nitride (c-BN) thin films synthesized by the ion-plating method were examined by high-resolution electron microscopy. It was found that the {0002} planes of hexagonal boron nitride (h-BN) at the boundaries of c-BN grains preferred to nucleate almost parallel to {111} planes of c-BN. Cross-sectional observation in the initial stage of growth showed that the c-BN can grow on top of the prismatic planes and the {0001} basal planes of h-BN, keeping the parallelism of the (111)c-BN to (0001)h-BN. A few degrees deviation (∼4°) between h-BN {0002} planes and c-BN {111} planes was frequently found in the film. The nucleation mechanism of c-BN was discussed analogous to that of diamond on graphite.

UR - http://www.scopus.com/inward/record.url?scp=36449000677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449000677&partnerID=8YFLogxK

U2 - 10.1063/1.114918

DO - 10.1063/1.114918

M3 - Article

VL - 67

SP - 3551

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -