Abstract
Diamond was deposited by the microwave plasma chemical vapor deposition method on a Si(100) substrate on which graphite flakes had been spread with their basal planes parallel to the substrate before deposition. Before diamond deposition, the substrate was preheated at 1200°C under hydrogen at 60 Torr to clean the surface of graphite flakes. Scanning electron micrographs showed that most of diamond particles were cubo-octahedral in morphology. The {111} planes of some diamond particles, which were judged by their triangular shape, were often parallel to the (0001) plane of graphite. Furthermore, some 〈111〉-oriented diamond particles were clearly nucleated at the edge of graphite. The possibility of heteroepitaxy of diamond on graphite was discussed based on crystallographic considerations.
Original language | English |
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Pages (from-to) | 540-542 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)