Origin of visible light absorption in GaN-rich (Ga1-xZn x)(N1-xOx) photocatalysts

Takeshi Hirai; Kazuhiko Maeda; Masaaki Yoshida; Jun Kubota; Shigeru Ikeda; Michio Matsumura; Kazunari Domen

doi:10.1021/jp709811k

Origin of visible light absorption in GaN-rich (Ga_1-xZn _x)(N_1-xO_x) photocatalysts

Takeshi Hirai, Kazuhiko Maeda, Masaaki Yoshida, Jun Kubota, Shigeru Ikeda, Michio Matsumura, Kazunari Domen

Research output: Contribution to journal › Article › peer-review

84 Citations (Scopus)

Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of (Ga_1-xZn_x)(N_1-xO_x) with compositions of x = 0.05-0.20 (i.e., GaN-rich) were measured at 10 K in an attempt to clarify the origin of the visible light activity of this material as a photocatalyst. It was found that the PL spectra of GaN-rich (Ga _1-xZn_x)(N_1-xO_x) can be interpreted to correspond to impurity levels, specifically acceptor levels formed by the substitution of Zn for Ga in GaN. The PL and PLE spectra suggest that the visible light absorption of this material occurs via the Zn-related acceptor levels.

Original language	English
Pages (from-to)	18853-18855
Number of pages	3
Journal	Journal of Physical Chemistry C
Volume	111
Issue number	51
DOIs	https://doi.org/10.1021/jp709811k
Publication status	Published - 2007 Dec 27
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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@article{db63f615de49452dab6aaabadbcbcc45,

title = "Origin of visible light absorption in GaN-rich (Ga1-xZn x)(N1-xOx) photocatalysts",

abstract = "Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of (Ga1-xZnx)(N1-xOx) with compositions of x = 0.05-0.20 (i.e., GaN-rich) were measured at 10 K in an attempt to clarify the origin of the visible light activity of this material as a photocatalyst. It was found that the PL spectra of GaN-rich (Ga 1-xZnx)(N1-xOx) can be interpreted to correspond to impurity levels, specifically acceptor levels formed by the substitution of Zn for Ga in GaN. The PL and PLE spectra suggest that the visible light absorption of this material occurs via the Zn-related acceptor levels.",

author = "Takeshi Hirai and Kazuhiko Maeda and Masaaki Yoshida and Jun Kubota and Shigeru Ikeda and Michio Matsumura and Kazunari Domen",

year = "2007",

month = dec,

day = "27",

doi = "10.1021/jp709811k",

language = "English",

volume = "111",

pages = "18853--18855",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "51",

}

TY - JOUR

T1 - Origin of visible light absorption in GaN-rich (Ga1-xZn x)(N1-xOx) photocatalysts

AU - Hirai, Takeshi

AU - Maeda, Kazuhiko

AU - Yoshida, Masaaki

AU - Kubota, Jun

AU - Ikeda, Shigeru

AU - Matsumura, Michio

AU - Domen, Kazunari

PY - 2007/12/27

Y1 - 2007/12/27

N2 - Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of (Ga1-xZnx)(N1-xOx) with compositions of x = 0.05-0.20 (i.e., GaN-rich) were measured at 10 K in an attempt to clarify the origin of the visible light activity of this material as a photocatalyst. It was found that the PL spectra of GaN-rich (Ga 1-xZnx)(N1-xOx) can be interpreted to correspond to impurity levels, specifically acceptor levels formed by the substitution of Zn for Ga in GaN. The PL and PLE spectra suggest that the visible light absorption of this material occurs via the Zn-related acceptor levels.

AB - Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of (Ga1-xZnx)(N1-xOx) with compositions of x = 0.05-0.20 (i.e., GaN-rich) were measured at 10 K in an attempt to clarify the origin of the visible light activity of this material as a photocatalyst. It was found that the PL spectra of GaN-rich (Ga 1-xZnx)(N1-xOx) can be interpreted to correspond to impurity levels, specifically acceptor levels formed by the substitution of Zn for Ga in GaN. The PL and PLE spectra suggest that the visible light absorption of this material occurs via the Zn-related acceptor levels.

UR - http://www.scopus.com/inward/record.url?scp=38349090827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38349090827&partnerID=8YFLogxK

U2 - 10.1021/jp709811k

DO - 10.1021/jp709811k

M3 - Article

AN - SCOPUS:38349090827

SN - 1932-7447

VL - 111

SP - 18853

EP - 18855

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 51

ER -

Origin of visible light absorption in GaN-rich (Ga_1-xZn _x)(N_1-xO_x) photocatalysts

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