Origin of visible light absorption in GaN-rich (Ga1-xZn x)(N1-xOx) photocatalysts

Takeshi Hirai, Kazuhiko Maeda, Masaaki Yoshida, Jun Kubota, Shigeru Ikeda, Michio Matsumura, Kazunari Domen

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Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectra of (Ga1-xZnx)(N1-xOx) with compositions of x = 0.05-0.20 (i.e., GaN-rich) were measured at 10 K in an attempt to clarify the origin of the visible light activity of this material as a photocatalyst. It was found that the PL spectra of GaN-rich (Ga 1-xZnx)(N1-xOx) can be interpreted to correspond to impurity levels, specifically acceptor levels formed by the substitution of Zn for Ga in GaN. The PL and PLE spectra suggest that the visible light absorption of this material occurs via the Zn-related acceptor levels.

Original languageEnglish
Pages (from-to)18853-18855
Number of pages3
JournalJournal of Physical Chemistry C
Volume111
Issue number51
DOIs
Publication statusPublished - 2007 Dec 27

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Hirai, T., Maeda, K., Yoshida, M., Kubota, J., Ikeda, S., Matsumura, M., & Domen, K. (2007). Origin of visible light absorption in GaN-rich (Ga1-xZn x)(N1-xOx) photocatalysts. Journal of Physical Chemistry C, 111(51), 18853-18855. https://doi.org/10.1021/jp709811k