Patterned carbon nanotube films formed by surface decomposition of SiC wafers

Michiko Kusunoki; Toshiyuki Suzuki; Chizuru Honjo; Craig Fisher; Tsukasa Hirayama; Mizuhisa Nihei; Yuji Awano

doi:10.1143/jjap.42.l1486

Patterned carbon nanotube films formed by surface decomposition of SiC wafers

Michiko Kusunoki, Toshiyuki Suzuki, Chizuru Honjo, Craig Fisher, Tsukasa Hirayama, Mizuhisa Nihei, Yuji Awano

Research output: Contribution to journal › Letter

10 Citations (Scopus)

Abstract

Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-l)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.

Original language	English
Pages (from-to)	L1486-L1488
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.42.l1486
Publication status	Published - 2003 Dec 1

Keywords

Alignment
Carbon nanotube
Patterning
SiC
Surface decomposition

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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Kusunoki, M., Suzuki, T., Honjo, C., Fisher, C., Hirayama, T., Nihei, M., & Awano, Y. (2003). Patterned carbon nanotube films formed by surface decomposition of SiC wafers. Japanese Journal of Applied Physics, Part 2: Letters, 42(12 A), L1486-L1488. https://doi.org/10.1143/jjap.42.l1486

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abstract = "Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-l)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.",

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AU - Kusunoki, Michiko

AU - Suzuki, Toshiyuki

AU - Honjo, Chizuru

AU - Fisher, Craig

AU - Hirayama, Tsukasa

AU - Nihei, Mizuhisa

AU - Awano, Yuji

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N2 - Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-l)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.

AB - Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-l)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.

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