Abstract
Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-l)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 12 A |
| Publication status | Published - 2003 Dec 1 |
| Externally published | Yes |
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Keywords
- Alignment
- Carbon nanotube
- Patterning
- SiC
- Surface decomposition
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Patterned carbon nanotube films formed by surface decomposition of SiC wafers. / Kusunoki, Michiko; Suzuki, Toshiyuki; Honjo, Chizuru; Fisher, Craig; Hirayama, Tsukasa; Nihei, Mizuhisa; Awano, Yuji.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 12 A, 01.12.2003.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Patterned carbon nanotube films formed by surface decomposition of SiC wafers
AU - Kusunoki, Michiko
AU - Suzuki, Toshiyuki
AU - Honjo, Chizuru
AU - Fisher, Craig
AU - Hirayama, Tsukasa
AU - Nihei, Mizuhisa
AU - Awano, Yuji
PY - 2003/12/1
Y1 - 2003/12/1
N2 - Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-l)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.
AB - Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-l)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.
KW - Alignment
KW - Carbon nanotube
KW - Patterning
KW - SiC
KW - Surface decomposition
UR - http://www.scopus.com/inward/record.url?scp=0742321225&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0742321225&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0742321225
VL - 42
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 A
ER -