Performance estimation of graphene field-effect transistors using semiclassical Monte Carlo simulation

Naoki Harada, Mari Ohfuti, Yuji Awano

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A semiclassical Monte Carlo simulation was run to estimate the performances of a monolayer and a bilayer (with vertical electric field of 1 V/nm applied) graphene-channel field-effect transistor (FET). The vertical field produces a band gap of 0.16eV and gives semiconductive properties in the bilayer graphene. Electrons in monolayer graphene show a notable velocity overshoot of up to 7.6 × 107 cm/s. A sub-0.1 ps transit time is also expected in a 65-nm channel device. The performance of a bilayer graphene-channel FET is inferior to a monolayer graphene one, but comparable with that of an InP high electron mobility transistor (HEMT). This lower performance may be attributed to the electron effective mass produced by the vertical field.

Original languageEnglish
Article number024002
JournalApplied Physics Express
Volume1
Issue number2
DOIs
Publication statusPublished - 2008 Feb
Externally publishedYes

Fingerprint

Field effect transistors
Graphene
graphene
field effect transistors
Monolayers
simulation
Electrons
transit time
High electron mobility transistors
high electron mobility transistors
Energy gap
electrons
Electric fields
Monte Carlo simulation
electric fields
estimates

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Performance estimation of graphene field-effect transistors using semiclassical Monte Carlo simulation. / Harada, Naoki; Ohfuti, Mari; Awano, Yuji.

In: Applied Physics Express, Vol. 1, No. 2, 024002, 02.2008.

Research output: Contribution to journalArticle

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