Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT

Yuji Awano, Makoto Kosugi, Takashi Mimura, Masayuki Abe

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    35 Citations (Scopus)

    Abstract

    The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An IDS of 11 mA/50 μ m, a gm of 500 mS/mm, and an fT of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.

    Original languageEnglish
    Pages (from-to)451-453
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume8
    Issue number10
    DOIs
    Publication statusPublished - 1987 Oct

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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