Abstract
The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An I<inf>DS</inf> of 11 mA/50 μ m, a g<inf>m</inf> of 500 mS/mm, and an f<inf>T</inf> of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.
| Original language | English |
|---|---|
| Pages (from-to) | 451-453 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 8 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1987 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT. / Awano, Yuji; Kosugi, Makoto; Mimura, Takashi; Abe, Masayuki.
In: IEEE Electron Device Letters, Vol. 8, No. 10, 1987, p. 451-453.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT
AU - Awano, Yuji
AU - Kosugi, Makoto
AU - Mimura, Takashi
AU - Abe, Masayuki
PY - 1987
Y1 - 1987
N2 - The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An IDS of 11 mA/50 μ m, a gm of 500 mS/mm, and an fT of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.
AB - The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An IDS of 11 mA/50 μ m, a gm of 500 mS/mm, and an fT of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.
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U2 - 10.1109/EDL.1987.26691
DO - 10.1109/EDL.1987.26691
M3 - Article
VL - 8
SP - 451
EP - 453
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 10
ER -