Abstract
The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An I<inf>DS</inf> of 11 mA/50 μ m, a g<inf>m</inf> of 500 mS/mm, and an f<inf>T</inf> of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.
| Original language | English |
|---|---|
| Pages (from-to) | 451-453 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 8 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1987 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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Awano, Y., Kosugi, M., Mimura, T., & Abe, M. (1987). Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT. IEEE Electron Device Letters, 8(10), 451-453. https://doi.org/10.1109/EDL.1987.26691