TY - JOUR
T1 - Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT
AU - Awano, Yuji
AU - Kosugi, Makoto
AU - Mimura, Takashi
AU - Abe, Masayuki
N1 - Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1987/10
Y1 - 1987/10
N2 - The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An IDS of 11 mA/50 μ m, a gm of 500 mS/mm, and an fT of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.
AB - The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An IDS of 11 mA/50 μ m, a gm of 500 mS/mm, and an fT of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.
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U2 - 10.1109/EDL.1987.26691
DO - 10.1109/EDL.1987.26691
M3 - Article
AN - SCOPUS:84939709213
VL - 8
SP - 451
EP - 453
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 10
ER -