Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT

Yuji Awano, Makoto Kosugi, Takashi Mimura, Masayuki Abe

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An I<inf>DS</inf> of 11 mA/50 μ m, a g<inf>m</inf> of 500 mS/mm, and an f<inf>T</inf> of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.

Original languageEnglish
Pages (from-to)451-453
Number of pages3
JournalIEEE Electron Device Letters
Volume8
Issue number10
DOIs
Publication statusPublished - 1987
Externally publishedYes

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High electron mobility transistors
Ballistics
Gates (transistor)
Electrons
Transconductance
Time delay
Energy dissipation
Electric properties
Experiments
Temperature
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT. / Awano, Yuji; Kosugi, Makoto; Mimura, Takashi; Abe, Masayuki.

In: IEEE Electron Device Letters, Vol. 8, No. 10, 1987, p. 451-453.

Research output: Contribution to journalArticle

Awano, Yuji ; Kosugi, Makoto ; Mimura, Takashi ; Abe, Masayuki. / Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT. In: IEEE Electron Device Letters. 1987 ; Vol. 8, No. 10. pp. 451-453.
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