Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT

Yuji Awano; Makoto Kosugi; Takashi Mimura; Masayuki Abe

doi:10.1109/EDL.1987.26691

Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT

Yuji Awano, Makoto Kosugi, Takashi Mimura, Masayuki Abe

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Abstract

The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An I<inf>DS</inf> of 11 mA/50 μ m, a g<inf>m</inf> of 500 mS/mm, and an f<inf>T</inf> of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.

Original language	English
Pages (from-to)	451-453
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1109/EDL.1987.26691
Publication status	Published - 1987
Externally published	Yes

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ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Awano, Y., Kosugi, M., Mimura, T., & Abe, M. (1987). Performance of a Quarter-Micrometer-Gate Ballistic Electron HEMT. IEEE Electron Device Letters, 8(10), 451-453. https://doi.org/10.1109/EDL.1987.26691

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10.1109/EDL.1987.26691