The electrical properties of a quarter-micrometer-gate HEMT have been studied by simulation and experiment. An I<inf>DS</inf> of 11 mA/50 μ m, a g<inf>m</inf> of 500 mS/mm, and an f<inf>T</inf> of 110 GHz have been predicted by two-dimensional Monte Carlo simulation for certain conditions. The reasons underlying the high performance are discussed in terms of the electron dynamics in the device. A record room-temperature propagation delay time of 9.2 ps/gate at a power dissipation of 4.2 mW/ gate with the maximum transconductance of 400 mS/mm was obtained experimentally for a 0.28- μ m-gate HEMT. Only a negligible short-channel effect was observed for reducing the gate length from 1.4 to 0.28 μ m.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials