Abstract
We systematically study short-channel performance, threshold voltage variability, and negative bias temperature instability in silicon tri-gate nanowire transistors (NW Tr.). By introducing epi S/D with thin gate spacer, on-current of NW Tr. is significantly improved for the same off-current thanks to the parasitic resistance (R SD) reduction. <100>-oriented NW channel further improves on-current as compared to <110> NW channel. In Pelgrom plot of σV th of NW Tr., there exists a universal line whose A vt is smaller than planar Tr. due to gate grain alignment. Deviation of the narrowest Tr. from σV th universal line is eliminated by suppressing R SD. Enhanced degradation by negative bias temperature stress in narrow NW Tr. can be attributed to the electric field concentration at the NW corner.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Reliability Physics Symposium Proceedings |
| DOIs | |
| Publication status | Published - 2012 |
| Externally published | Yes |
| Event | 2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States Duration: 2012 Apr 15 → 2012 Apr 19 |
Other
| Other | 2012 IEEE International Reliability Physics Symposium, IRPS 2012 |
|---|---|
| Country | United States |
| City | Anaheim, CA |
| Period | 12/4/15 → 12/4/19 |
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Keywords
- nanowire
- negative bias temperature instability
- parasitic resistance
- tri-gate
- variability
ASJC Scopus subject areas
- Engineering(all)
Cite this
Performance, variability and reliability of silicon tri-gate nanowire MOSFETs. / Saitoh, Masumi; Ota, Kensuke; Tanaka, Chika; Nakabayashi, Yukio; Uchida, Ken; Numata, Toshinori.
IEEE International Reliability Physics Symposium Proceedings. 2012. 6241864.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Performance, variability and reliability of silicon tri-gate nanowire MOSFETs
AU - Saitoh, Masumi
AU - Ota, Kensuke
AU - Tanaka, Chika
AU - Nakabayashi, Yukio
AU - Uchida, Ken
AU - Numata, Toshinori
PY - 2012
Y1 - 2012
N2 - We systematically study short-channel performance, threshold voltage variability, and negative bias temperature instability in silicon tri-gate nanowire transistors (NW Tr.). By introducing epi S/D with thin gate spacer, on-current of NW Tr. is significantly improved for the same off-current thanks to the parasitic resistance (R SD) reduction. <100>-oriented NW channel further improves on-current as compared to <110> NW channel. In Pelgrom plot of σV th of NW Tr., there exists a universal line whose A vt is smaller than planar Tr. due to gate grain alignment. Deviation of the narrowest Tr. from σV th universal line is eliminated by suppressing R SD. Enhanced degradation by negative bias temperature stress in narrow NW Tr. can be attributed to the electric field concentration at the NW corner.
AB - We systematically study short-channel performance, threshold voltage variability, and negative bias temperature instability in silicon tri-gate nanowire transistors (NW Tr.). By introducing epi S/D with thin gate spacer, on-current of NW Tr. is significantly improved for the same off-current thanks to the parasitic resistance (R SD) reduction. <100>-oriented NW channel further improves on-current as compared to <110> NW channel. In Pelgrom plot of σV th of NW Tr., there exists a universal line whose A vt is smaller than planar Tr. due to gate grain alignment. Deviation of the narrowest Tr. from σV th universal line is eliminated by suppressing R SD. Enhanced degradation by negative bias temperature stress in narrow NW Tr. can be attributed to the electric field concentration at the NW corner.
KW - nanowire
KW - negative bias temperature instability
KW - parasitic resistance
KW - tri-gate
KW - variability
UR - http://www.scopus.com/inward/record.url?scp=84866605399&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866605399&partnerID=8YFLogxK
U2 - 10.1109/IRPS.2012.6241864
DO - 10.1109/IRPS.2012.6241864
M3 - Conference contribution
AN - SCOPUS:84866605399
SN - 9781457716799
BT - IEEE International Reliability Physics Symposium Proceedings
ER -