Abstract
Fast and low power consumption optical switches are required for photonic networks. To this end, we proposed the optical gate switch using phase change material (PCM) and silicon waveguides. This switch had low power consumption because it consumed power only when the state was changed. Furthermore, the chip size is very small due to the large refractive index change of PCM. In this paper, we studied the phase-change characteristics of various kinds of thin GST film on SOI (silicon-on-insulator). A laser diode (LD) with a wavelength of 660 nm was used to irradiate the material. We compared the optical responses by laser pulse irradiation on GST films, and concluded GST-147 was the most suitable material for the optical switch because it had the lowest phase change threshold. The phase-change characteristics of GST-225 films with thickness of 25 nm, 50 nm and 75 nm were also examined. Thicker GST films had lower phase change thresholds. However, thermal simulations showed that the phase of the bottom part of thicker films may not be changed. Therefore, we concluded that GST films with thicknesses between 25 nm to 50 nm are the most suitable for optical switches.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 7943 |
| DOIs | |
| Publication status | Published - 2011 |
| Event | Silicon Photonics VI - San Francisco, CA, United States Duration: 2011 Jan 23 → 2011 Jan 26 |
Other
| Other | Silicon Photonics VI |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 11/1/23 → 11/1/26 |
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Keywords
- Optical switch
- Phase-change material
- Pulse irradiation
- Silicon photonics
- Silicon-on-insulator
- Thermal simulation
- Thin film
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Phase change characteristics of Ge2Sb2Te5 thin film for a self-holding optical gate switch. / Toyosaki, Tatsuya; Tanaka, Daiki; Shoji, Yuya; Kuwahara, Masashi; Wang, Xiaomin; Kintaka, Kenji; Kawashima, Hitoshi; Ikuma, Yuichiro; Tsuda, Hiroyuki.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7943 2011. 794306.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Phase change characteristics of Ge2Sb2Te5 thin film for a self-holding optical gate switch
AU - Toyosaki, Tatsuya
AU - Tanaka, Daiki
AU - Shoji, Yuya
AU - Kuwahara, Masashi
AU - Wang, Xiaomin
AU - Kintaka, Kenji
AU - Kawashima, Hitoshi
AU - Ikuma, Yuichiro
AU - Tsuda, Hiroyuki
PY - 2011
Y1 - 2011
N2 - Fast and low power consumption optical switches are required for photonic networks. To this end, we proposed the optical gate switch using phase change material (PCM) and silicon waveguides. This switch had low power consumption because it consumed power only when the state was changed. Furthermore, the chip size is very small due to the large refractive index change of PCM. In this paper, we studied the phase-change characteristics of various kinds of thin GST film on SOI (silicon-on-insulator). A laser diode (LD) with a wavelength of 660 nm was used to irradiate the material. We compared the optical responses by laser pulse irradiation on GST films, and concluded GST-147 was the most suitable material for the optical switch because it had the lowest phase change threshold. The phase-change characteristics of GST-225 films with thickness of 25 nm, 50 nm and 75 nm were also examined. Thicker GST films had lower phase change thresholds. However, thermal simulations showed that the phase of the bottom part of thicker films may not be changed. Therefore, we concluded that GST films with thicknesses between 25 nm to 50 nm are the most suitable for optical switches.
AB - Fast and low power consumption optical switches are required for photonic networks. To this end, we proposed the optical gate switch using phase change material (PCM) and silicon waveguides. This switch had low power consumption because it consumed power only when the state was changed. Furthermore, the chip size is very small due to the large refractive index change of PCM. In this paper, we studied the phase-change characteristics of various kinds of thin GST film on SOI (silicon-on-insulator). A laser diode (LD) with a wavelength of 660 nm was used to irradiate the material. We compared the optical responses by laser pulse irradiation on GST films, and concluded GST-147 was the most suitable material for the optical switch because it had the lowest phase change threshold. The phase-change characteristics of GST-225 films with thickness of 25 nm, 50 nm and 75 nm were also examined. Thicker GST films had lower phase change thresholds. However, thermal simulations showed that the phase of the bottom part of thicker films may not be changed. Therefore, we concluded that GST films with thicknesses between 25 nm to 50 nm are the most suitable for optical switches.
KW - Optical switch
KW - Phase-change material
KW - Pulse irradiation
KW - Silicon photonics
KW - Silicon-on-insulator
KW - Thermal simulation
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=79953708817&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79953708817&partnerID=8YFLogxK
U2 - 10.1117/12.874712
DO - 10.1117/12.874712
M3 - Conference contribution
AN - SCOPUS:79953708817
SN - 9780819484802
VL - 7943
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -