Phase change characteristics of Ge2Sb2Te5 thin film for a self-holding optical gate switch

Tatsuya Toyosaki, Daiki Tanaka, Yuya Shoji, Masashi Kuwahara, Xiaomin Wang, Kenji Kintaka, Hitoshi Kawashima, Yuichiro Ikuma, Hiroyuki Tsuda

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Fast and low power consumption optical switches are required for photonic networks. To this end, we proposed the optical gate switch using phase change material (PCM) and silicon waveguides. This switch had low power consumption because it consumed power only when the state was changed. Furthermore, the chip size is very small due to the large refractive index change of PCM. In this paper, we studied the phase-change characteristics of various kinds of thin GST film on SOI (silicon-on-insulator). A laser diode (LD) with a wavelength of 660 nm was used to irradiate the material. We compared the optical responses by laser pulse irradiation on GST films, and concluded GST-147 was the most suitable material for the optical switch because it had the lowest phase change threshold. The phase-change characteristics of GST-225 films with thickness of 25 nm, 50 nm and 75 nm were also examined. Thicker GST films had lower phase change thresholds. However, thermal simulations showed that the phase of the bottom part of thicker films may not be changed. Therefore, we concluded that GST films with thicknesses between 25 nm to 50 nm are the most suitable for optical switches.

    Original languageEnglish
    Title of host publicationSilicon Photonics VI
    DOIs
    Publication statusPublished - 2011 Apr 11
    EventSilicon Photonics VI - San Francisco, CA, United States
    Duration: 2011 Jan 232011 Jan 26

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume7943
    ISSN (Print)0277-786X

    Other

    OtherSilicon Photonics VI
    CountryUnited States
    CitySan Francisco, CA
    Period11/1/2311/1/26

    Keywords

    • Optical switch
    • Phase-change material
    • Pulse irradiation
    • Silicon photonics
    • Silicon-on-insulator
    • Thermal simulation
    • Thin film

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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  • Cite this

    Toyosaki, T., Tanaka, D., Shoji, Y., Kuwahara, M., Wang, X., Kintaka, K., Kawashima, H., Ikuma, Y., & Tsuda, H. (2011). Phase change characteristics of Ge2Sb2Te5 thin film for a self-holding optical gate switch. In Silicon Photonics VI [794306] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7943). https://doi.org/10.1117/12.874712