Phase-change optical recording: Past, present, future

A. V. Kolobov, P. Fons, J. Tominaga

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We discuss specific features of Te-based compounds that made them the best materials for the phase-change data storage. It is demonstrated that the phase-change recording is due to a switch of Ge atoms between octahedral and tetrahedral symmetry positions within the Te face-centered cubic lattice. It is this nature of the transition that makes the Te-based media fast and stable. The driving force for this transition is also discussed. The chapter is concluded by introduction of a concept of the super-resolution near-field structure (super-RENS) disc that allows to reduce a bit size well below the diffraction limit and makes 100 GB/disc storage a reality.

Original languageEnglish
Pages (from-to)7534-7537
Number of pages4
JournalThin Solid Films
Volume515
Issue number19 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Jul 16
Externally publishedYes

Keywords

  • Chalcogenides
  • EXAFS
  • Phase-change memories
  • XANES

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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