Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases

Shogo Hatayama, Yuta Saito, Kotaro Makino, Noriyuki Uchida, Yi Shuang, Shunsuke Mori, Yuji Sutou, Milos Krbal, Paul Fons

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Sputter-grown amorphous Mo-Te films were annealed to obtain the crystalline phase. Although as-deposited films exhibited an off-stoichiometric Te-rich composition, optimized annealing conditions enabled the elimination of excess Te by a preferential sublimation process. Owing to their similar local structure, the disordered amorphous phase first crystallized into a high temperature phase, 1T′, followed by a phase transition to the 2H structure upon further annealing. To realize 2D MoTe2-based novel devices, understanding the crystallization mechanism of amorphous Mo-Te films is critical. Furthermore, the robustness of the fabrication method, i.e., the establishment of a method to realize MoTe2 single-phase formation, which does not require the initial composition of the as-deposited amorphous film to be exactly stoichiometric, will greatly contribute to the deposition of large-area MoTe2 films essential for industrial applications.

Original languageEnglish
Pages (from-to)10627-10635
Number of pages9
JournalJournal of Materials Chemistry C
Volume10
Issue number29
DOIs
Publication statusPublished - 2022 Jul 12

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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