Abstract
A parallel plate capacitively coupled plasma (CCP) exhibits the fundamental property for dry etching. Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. A pulsed operation of the CCP will provide charging free processes for etching. The interface between a pulsed plasma and a microstructure on a wafer is investigated by the relaxation Continuum/Boltzmann equation model. The capability of the pulsed plasma tor producing a drift electron wave and negative ions to the wafer surface is demonstrated and discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1187-1191 |
| Number of pages | 5 |
| Journal | Pure and Applied Chemistry |
| Volume | 70 |
| Issue number | 6 |
| Publication status | Published - 1998 Jun |
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ASJC Scopus subject areas
- Chemistry(all)
Cite this
Phasespace modelling of a radiofrequency plasma interacting with surfaces. / Makabe, Toshiaki; Matsui, Jun; Nakano, Nobuhiko.
In: Pure and Applied Chemistry, Vol. 70, No. 6, 06.1998, p. 1187-1191.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phasespace modelling of a radiofrequency plasma interacting with surfaces
AU - Makabe, Toshiaki
AU - Matsui, Jun
AU - Nakano, Nobuhiko
PY - 1998/6
Y1 - 1998/6
N2 - A parallel plate capacitively coupled plasma (CCP) exhibits the fundamental property for dry etching. Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. A pulsed operation of the CCP will provide charging free processes for etching. The interface between a pulsed plasma and a microstructure on a wafer is investigated by the relaxation Continuum/Boltzmann equation model. The capability of the pulsed plasma tor producing a drift electron wave and negative ions to the wafer surface is demonstrated and discussed.
AB - A parallel plate capacitively coupled plasma (CCP) exhibits the fundamental property for dry etching. Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. A pulsed operation of the CCP will provide charging free processes for etching. The interface between a pulsed plasma and a microstructure on a wafer is investigated by the relaxation Continuum/Boltzmann equation model. The capability of the pulsed plasma tor producing a drift electron wave and negative ions to the wafer surface is demonstrated and discussed.
UR - http://www.scopus.com/inward/record.url?scp=0542442697&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0542442697&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0542442697
VL - 70
SP - 1187
EP - 1191
JO - Pure and Applied Chemistry
JF - Pure and Applied Chemistry
SN - 0033-4545
IS - 6
ER -