Phasespace modelling of a radiofrequency plasma interacting with surfaces

Toshiaki Makabe, Jun Matsui, Nobuhiko Nakano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A parallel plate capacitively coupled plasma (CCP) exhibits the fundamental property for dry etching. Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. A pulsed operation of the CCP will provide charging free processes for etching. The interface between a pulsed plasma and a microstructure on a wafer is investigated by the relaxation Continuum/Boltzmann equation model. The capability of the pulsed plasma tor producing a drift electron wave and negative ions to the wafer surface is demonstrated and discussed.

Original languageEnglish
Pages (from-to)1187-1191
Number of pages5
JournalPure and Applied Chemistry
Volume70
Issue number6
DOIs
Publication statusPublished - 1998 Jun

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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