TY - JOUR
T1 - Phasespace modelling of a radiofrequency plasma interacting with surfaces
AU - Makabe, Toshiaki
AU - Matsui, Jun
AU - Nakano, Nobuhiko
N1 - Funding Information:
This work is partly supported by the Keio University Special Grant-in-Aid for Innovative and Collaborative Research Project, and by the Semiconductor Technology Academic Research Center (STARC).
PY - 1998/6
Y1 - 1998/6
N2 - A parallel plate capacitively coupled plasma (CCP) exhibits the fundamental property for dry etching. Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. A pulsed operation of the CCP will provide charging free processes for etching. The interface between a pulsed plasma and a microstructure on a wafer is investigated by the relaxation Continuum/Boltzmann equation model. The capability of the pulsed plasma tor producing a drift electron wave and negative ions to the wafer surface is demonstrated and discussed.
AB - A parallel plate capacitively coupled plasma (CCP) exhibits the fundamental property for dry etching. Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. A pulsed operation of the CCP will provide charging free processes for etching. The interface between a pulsed plasma and a microstructure on a wafer is investigated by the relaxation Continuum/Boltzmann equation model. The capability of the pulsed plasma tor producing a drift electron wave and negative ions to the wafer surface is demonstrated and discussed.
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U2 - 10.1351/pac199870061187
DO - 10.1351/pac199870061187
M3 - Article
AN - SCOPUS:0542442697
VL - 70
SP - 1187
EP - 1191
JO - Pure and Applied Chemistry
JF - Pure and Applied Chemistry
SN - 0033-4545
IS - 6
ER -