Phasespace modelling of a radiofrequency plasma interacting with surfaces

Toshiaki Makabe; Jun Matsui; Nobuhiko Nakano

doi:10.1351/pac199870061187

Phasespace modelling of a radiofrequency plasma interacting with surfaces

Toshiaki Makabe, Jun Matsui, Nobuhiko Nakano

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

A parallel plate capacitively coupled plasma (CCP) exhibits the fundamental property for dry etching. Local excess charging is one of the causes of damage to ULSI circuit fabrication, i.e., anomalous etching and electrical breakdown of the gate oxide. A pulsed operation of the CCP will provide charging free processes for etching. The interface between a pulsed plasma and a microstructure on a wafer is investigated by the relaxation Continuum/Boltzmann equation model. The capability of the pulsed plasma tor producing a drift electron wave and negative ions to the wafer surface is demonstrated and discussed.

Original language	English
Pages (from-to)	1187-1191
Number of pages	5
Journal	Pure and Applied Chemistry
Volume	70
Issue number	6
DOIs	https://doi.org/10.1351/pac199870061187
Publication status	Published - 1998 Jun

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ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)

Cite this

Makabe, T., Matsui, J., & Nakano, N. (1998). Phasespace modelling of a radiofrequency plasma interacting with surfaces. Pure and Applied Chemistry, 70(6), 1187-1191. https://doi.org/10.1351/pac199870061187

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10.1351/pac199870061187