Abstract
We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 39 |
| Issue number | 9 A/B |
| Publication status | Published - 2000 Sep 15 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations. / Okajima, Ko; Takeda, Kyozaburo; Oyama, Norihisa; Ohta, Eiji; Shiraishi, Kenji; Ohno, Takahisa.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 39, No. 9 A/B, 15.09.2000.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations
AU - Okajima, Ko
AU - Takeda, Kyozaburo
AU - Oyama, Norihisa
AU - Ohta, Eiji
AU - Shiraishi, Kenji
AU - Ohno, Takahisa
PY - 2000/9/15
Y1 - 2000/9/15
N2 - We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
AB - We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
UR - http://www.scopus.com/inward/record.url?scp=0034269228&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034269228&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0034269228
VL - 39
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 A/B
ER -