Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

Ko Okajima; Kyozaburo Takeda; Norihisa Oyama; Eiji Ohta; Kenji Shiraishi; Takahisa Ohno

Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

Ko Okajima, Kyozaburo Takeda, Norihisa Oyama, Eiji Ohta, Kenji Shiraishi, Takahisa Ohno

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.

Original language	English
Pages (from-to)	L917-L920
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	39
Issue number	9 A/B
Publication status	Published - 2000 Sep 15

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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abstract = "We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.",

author = "Ko Okajima and Kyozaburo Takeda and Norihisa Oyama and Eiji Ohta and Kenji Shiraishi and Takahisa Ohno",

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T1 - Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

AU - Okajima, Ko

AU - Takeda, Kyozaburo

AU - Oyama, Norihisa

AU - Ohta, Eiji

AU - Shiraishi, Kenji

AU - Ohno, Takahisa

PY - 2000/9/15

Y1 - 2000/9/15

N2 - We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.

AB - We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.

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M3 - Article

AN - SCOPUS:0034269228

VL - 39

SP - L917-L920

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 A/B

ER -