Abstract
We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
| Original language | English |
|---|---|
| Pages (from-to) | L917-L920 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 39 |
| Issue number | 9 A/B |
| Publication status | Published - 2000 Sep 15 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)