Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

Ko Okajima, Kyozaburo Takeda, Norihisa Oyama, Eiji Ohta, Kenji Shiraishi, Takahisa Ohno

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Abstract

We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.

Original languageEnglish
Pages (from-to)L917-L920
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number9 A/B
Publication statusPublished - 2000 Sep 15

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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    Okajima, K., Takeda, K., Oyama, N., Ohta, E., Shiraishi, K., & Ohno, T. (2000). Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations. Japanese Journal of Applied Physics, Part 2: Letters, 39(9 A/B), L917-L920.