Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

Ko Okajima, Kyozaburo Takeda, Norihisa Oyama, Eiji Ohta, Kenji Shiraishi, Takahisa Ohno

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number9 A/B
Publication statusPublished - 2000 Sep 15

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Semiconductor growth
Dislocations (crystals)
Epitaxial growth
Semiconductor materials

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Okajima, K., Takeda, K., Oyama, N., Ohta, E., Shiraishi, K., & Ohno, T. (2000). Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations. Japanese Journal of Applied Physics, Part 2: Letters, 39(9 A/B).

Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations. / Okajima, Ko; Takeda, Kyozaburo; Oyama, Norihisa; Ohta, Eiji; Shiraishi, Kenji; Ohno, Takahisa.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 39, No. 9 A/B, 15.09.2000.

Research output: Contribution to journalArticle

Okajima, K, Takeda, K, Oyama, N, Ohta, E, Shiraishi, K & Ohno, T 2000, 'Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations', Japanese Journal of Applied Physics, Part 2: Letters, vol. 39, no. 9 A/B.
Okajima, Ko ; Takeda, Kyozaburo ; Oyama, Norihisa ; Ohta, Eiji ; Shiraishi, Kenji ; Ohno, Takahisa. / Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations. In: Japanese Journal of Applied Physics, Part 2: Letters. 2000 ; Vol. 39, No. 9 A/B.
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