Phonon assisted tunneling and peak-to-valley ratio in a magnetically confined quasi zero dimensional InGaAs/InAlAs resonant tunneling diode

Christoph Wirner, Yuji Awano, Toshiro Futatsugi, Naoki Yokoyama, Tadashi Nakagawa, Hiroshi Bando, Shunichi Muto, Minoru Ohno, Noboru Miura

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    We studied phonon-assisted tunneling and the peak-to-valley ratio (P/V ratio) of magnetically confined "dot-like" electron systems in an InGaAs/InAlAs triple barrier resonant tunneling diode. We observe phonon bottleneck, i.e., suppression of the nonresonant valley current and two mode narrow band GaAs- and AlAs-like longitudinal optical (LO)-phonon-assisted tunneling peaks. The P/V ratio increases remarkably with the magnetic confinement and has a maximum each time the energy separation of the confined states matches the GaAs-LO-phonon energy.

    Original languageEnglish
    Pages (from-to)1958-1960
    Number of pages3
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume36
    Issue number3 SUPPL. B
    DOIs
    Publication statusPublished - 1997 Mar

    Keywords

    • Phonon relaxation
    • Resonant tunneling diode
    • Zero dimensional electron gas

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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