Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields

C. Wirner, Yuji Awano, N. Yokoyama, M. Ohno, N. Miura, T. Nakagawa, H. Bando

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigated non-resonant phonon-assisted tunnelling in an InGaAs/InAlAs triple barrier tunnelling diode in the presence of high magnetic fields up to 40 T in the current direction. We observe quenching of the non-resonant valley current and narrow band GaAs-like and AlAs-like longitudinal optical (LO) phonon peaks related to the phonon bottleneck effect. The peak-to-valley ratio of the device increases significantly up to magnetic fields of 12 T. LO-phonon peaks give information about the electron-LO-phonon coupling strength in the well and the barrier layers.

Original languageEnglish
Pages (from-to)998-1002
Number of pages5
JournalSemiconductor Science and Technology
Volume12
Issue number8
DOIs
Publication statusPublished - 1997 Aug
Externally publishedYes

Fingerprint

Diodes
diodes
Magnetic fields
valleys
magnetic fields
Quenching
barrier layers
narrowband
Electrons
quenching
electrons
gallium arsenide
Direction compound

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields. / Wirner, C.; Awano, Yuji; Yokoyama, N.; Ohno, M.; Miura, N.; Nakagawa, T.; Bando, H.

In: Semiconductor Science and Technology, Vol. 12, No. 8, 08.1997, p. 998-1002.

Research output: Contribution to journalArticle

Wirner, C. ; Awano, Yuji ; Yokoyama, N. ; Ohno, M. ; Miura, N. ; Nakagawa, T. ; Bando, H. / Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields. In: Semiconductor Science and Technology. 1997 ; Vol. 12, No. 8. pp. 998-1002.
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AU - Miura, N.

AU - Nakagawa, T.

AU - Bando, H.

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