Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields

C. Wirner, Y. Awano, N. Yokoyama, M. Ohno, N. Miura, T. Nakagawa, H. Bando

Research output: Contribution to journalArticle

7 Citations (Scopus)


We investigated non-resonant phonon-assisted tunnelling in an InGaAs/InAlAs triple barrier tunnelling diode in the presence of high magnetic fields up to 40 T in the current direction. We observe quenching of the non-resonant valley current and narrow band GaAs-like and AlAs-like longitudinal optical (LO) phonon peaks related to the phonon bottleneck effect. The peak-to-valley ratio of the device increases significantly up to magnetic fields of 12 T. LO-phonon peaks give information about the electron-LO-phonon coupling strength in the well and the barrier layers.

Original languageEnglish
Pages (from-to)998-1002
Number of pages5
JournalSemiconductor Science and Technology
Issue number8
Publication statusPublished - 1997 Aug 1


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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