Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields

C. Wirner; Y. Awano; N. Yokoyama; M. Ohno; N. Miura; T. Nakagawa; H. Bando

doi:10.1088/0268-1242/12/8/012

Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields

C. Wirner, Y. Awano, N. Yokoyama, M. Ohno, N. Miura, T. Nakagawa, H. Bando

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated non-resonant phonon-assisted tunnelling in an InGaAs/InAlAs triple barrier tunnelling diode in the presence of high magnetic fields up to 40 T in the current direction. We observe quenching of the non-resonant valley current and narrow band GaAs-like and AlAs-like longitudinal optical (LO) phonon peaks related to the phonon bottleneck effect. The peak-to-valley ratio of the device increases significantly up to magnetic fields of 12 T. LO-phonon peaks give information about the electron-LO-phonon coupling strength in the well and the barrier layers.

Original language	English
Pages (from-to)	998-1002
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	12
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/12/8/012
Publication status	Published - 1997 Aug
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/12/8/012

Cite this

@article{a76c55efa52d4d59a4469b37cbed3f7d,

title = "Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields",

abstract = "We investigated non-resonant phonon-assisted tunnelling in an InGaAs/InAlAs triple barrier tunnelling diode in the presence of high magnetic fields up to 40 T in the current direction. We observe quenching of the non-resonant valley current and narrow band GaAs-like and AlAs-like longitudinal optical (LO) phonon peaks related to the phonon bottleneck effect. The peak-to-valley ratio of the device increases significantly up to magnetic fields of 12 T. LO-phonon peaks give information about the electron-LO-phonon coupling strength in the well and the barrier layers.",

author = "C. Wirner and Y. Awano and N. Yokoyama and M. Ohno and N. Miura and T. Nakagawa and H. Bando",

year = "1997",

month = aug,

doi = "10.1088/0268-1242/12/8/012",

language = "English",

volume = "12",

pages = "998--1002",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields

AU - Wirner, C.

AU - Awano, Y.

AU - Yokoyama, N.

AU - Ohno, M.

AU - Miura, N.

AU - Nakagawa, T.

AU - Bando, H.

PY - 1997/8

Y1 - 1997/8

N2 - We investigated non-resonant phonon-assisted tunnelling in an InGaAs/InAlAs triple barrier tunnelling diode in the presence of high magnetic fields up to 40 T in the current direction. We observe quenching of the non-resonant valley current and narrow band GaAs-like and AlAs-like longitudinal optical (LO) phonon peaks related to the phonon bottleneck effect. The peak-to-valley ratio of the device increases significantly up to magnetic fields of 12 T. LO-phonon peaks give information about the electron-LO-phonon coupling strength in the well and the barrier layers.

AB - We investigated non-resonant phonon-assisted tunnelling in an InGaAs/InAlAs triple barrier tunnelling diode in the presence of high magnetic fields up to 40 T in the current direction. We observe quenching of the non-resonant valley current and narrow band GaAs-like and AlAs-like longitudinal optical (LO) phonon peaks related to the phonon bottleneck effect. The peak-to-valley ratio of the device increases significantly up to magnetic fields of 12 T. LO-phonon peaks give information about the electron-LO-phonon coupling strength in the well and the barrier layers.

UR - http://www.scopus.com/inward/record.url?scp=0031209584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031209584&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/12/8/012

DO - 10.1088/0268-1242/12/8/012

M3 - Article

AN - SCOPUS:0031209584

SN - 0268-1242

VL - 12

SP - 998

EP - 1002

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Phonon bottleneck effects in an InGaAs/InAlAs triple barrier tunnelling diode at high magnetic fields

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this