Phonon lasing in transport through double quantum dots

Rin Okuyama, Mikio Eto, Tobias Brandes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An optical phonon laser is proposed using a double quantum dot (DQD) fabricated on semiconductor substrates. The DQD couples to two modes of LO phonons which work as a natural cavity. The pumping is realized by the electric current under a finite bias. We show that lasing takes place when the tunneling rate to external leads is much larger than the decay rate of phonons.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages259-260
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013 Jan 1
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 2012 Jul 292012 Aug 3

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period12/7/2912/8/3

Keywords

  • Franck-Condon effect
  • laser
  • optical phonon
  • quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Okuyama, R., Eto, M., & Brandes, T. (2013). Phonon lasing in transport through double quantum dots. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 259-260). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848384