Phonons in isotopically disordered Ge

P. Etchegoin, H. D. Fuchs, J. Weber, M. Cardona, L. Pintschovius, N. Pyka, Kohei M Itoh, E. E. Haller

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Abstract

We report Raman- and neutron-scattering, infrared-transmission, and photoluminescence experiments in a series of isotopically enriched samples of Ge, including natural Ge and an alloy Ge0.570 Ge0.576. Emphasis is put on the study of disorder-induced effects on the phonon spectra. Results are compared to exhaustive theoretical calculations using the coherent-potential and self-consistent Born approximations. Reasonably good agreement is found between theory and experiment for the former. Data for the dependence of the energy of the E1 interband electronic gap on isotopic mass are also presented.

Original languageEnglish
Pages (from-to)12661-12671
Number of pages11
JournalPhysical Review B
Volume48
Issue number17
DOIs
Publication statusPublished - 1993
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Etchegoin, P., Fuchs, H. D., Weber, J., Cardona, M., Pintschovius, L., Pyka, N., Itoh, K. M., & Haller, E. E. (1993). Phonons in isotopically disordered Ge. Physical Review B, 48(17), 12661-12671. https://doi.org/10.1103/PhysRevB.48.12661