Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

M. Y. Kang, T. Yamamoto, Takuro Yamaguchi, H. Kuwano

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)343-344
Number of pages2
JournalJournal of Materials Science Letters
Volume15
Issue number4
DOIs
Publication statusPublished - 1996 Feb 15

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Grain size and shape
Germanium
Boron
Amorphization
Crystallization
Polysilicon
Ion implantation
Silicon Dioxide
Phosphorus
Grain boundaries
Nucleation
Doping (additives)
Annealing

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation. / Kang, M. Y.; Yamamoto, T.; Yamaguchi, Takuro; Kuwano, H.

In: Journal of Materials Science Letters, Vol. 15, No. 4, 15.02.1996, p. 343-344.

Research output: Contribution to journalArticle

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