Photo-induced structural change in a-SiO2 with undulator radiation

K. Awazu, H. Onuki, Hiroaki Imai, H. Hirashima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We study the change in principle peak in infrared spectrum, refractive index, thickness in amorphous SiO2 (a-SiO2) caused by the irradiation of high energy photons from undulator radiation. A-SiO2 film is fabricated by thermal oxidation of silicon wafers at 1000°C in an oxygen atmosphere. Illumination in vacuum ultraviolet region is performed out with Onuki-type undulator installed in the electron storage ring (NIJI II) in Electrotechnical Laboratory (ETL). Downshift to lower energy of principle peak at 1080cm-1 in IR spectrum by illumination implies reduction of the mean Si-O-Si bond angle. We assume that the network structure in the illuminated a-SiO2 was very close to that in densified a-SiO2.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume80
DOIs
Publication statusPublished - 1996 May

Fingerprint

Wigglers
illumination
Radiation
radiation
Lighting
infrared spectra
Storage rings
wafers
refractivity
Silicon wafers
atmospheres
vacuum
oxidation
irradiation
energy
Refractive index
photons
silicon
oxygen
Photons

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

Photo-induced structural change in a-SiO2 with undulator radiation. / Awazu, K.; Onuki, H.; Imai, Hiroaki; Hirashima, H.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 80, 05.1996, p. 69-72.

Research output: Contribution to journalArticle

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