Photocarrier localization and recombination dynamics in Cu 2ZnSnS4 single crystals

Le Quang Phuong; Makoto Okano; Yasuhiro Yamada; Akira Nagaoka; Kenji Yoshino; Yoshihiko Kanemitsu

doi:10.1063/1.4829063

Photocarrier localization and recombination dynamics in Cu ₂ZnSnS₄ single crystals

Le Quang Phuong, Makoto Okano, Yasuhiro Yamada, Akira Nagaoka, Kenji Yoshino, Yoshihiko Kanemitsu

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

We have studied the photocarrier localization and recombination dynamics in Cu₂ZnSnS₄ single crystals at room temperature. The band-gap energy and tail states below the band edge were evaluated by a combination of photoluminescence (PL), PL excitation, photocurrent, and femtosecond transient reflectivity spectroscopy. The photocarriers are rapidly localized to shallow tail states within a typical time constant of several picoseconds to a few tens of picoseconds. The sub-nanosecond PL decay dynamics indicate the importance of multiple carrier trapping processes in the shallow tail states. Therefore, it is concluded that the tail states dominate the optical responses of Cu₂ZnSnS₄ single crystals.

Original language	English
Article number	191902
Journal	Applied Physics Letters
Volume	103
Issue number	19
DOIs	https://doi.org/10.1063/1.4829063
Publication status	Published - 2013 Nov 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We have studied the photocarrier localization and recombination dynamics in Cu2ZnSnS4 single crystals at room temperature. The band-gap energy and tail states below the band edge were evaluated by a combination of photoluminescence (PL), PL excitation, photocurrent, and femtosecond transient reflectivity spectroscopy. The photocarriers are rapidly localized to shallow tail states within a typical time constant of several picoseconds to a few tens of picoseconds. The sub-nanosecond PL decay dynamics indicate the importance of multiple carrier trapping processes in the shallow tail states. Therefore, it is concluded that the tail states dominate the optical responses of Cu2ZnSnS4 single crystals.",

author = "{Quang Phuong}, Le and Makoto Okano and Yasuhiro Yamada and Akira Nagaoka and Kenji Yoshino and Yoshihiko Kanemitsu",

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AU - Quang Phuong, Le

AU - Okano, Makoto

AU - Yamada, Yasuhiro

AU - Nagaoka, Akira

AU - Yoshino, Kenji

AU - Kanemitsu, Yoshihiko

N1 - Funding Information: This work was supported by JST-CREST and the Sumitomo Electric Industries Group CSR Foundation.

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Y1 - 2013/11/4

N2 - We have studied the photocarrier localization and recombination dynamics in Cu2ZnSnS4 single crystals at room temperature. The band-gap energy and tail states below the band edge were evaluated by a combination of photoluminescence (PL), PL excitation, photocurrent, and femtosecond transient reflectivity spectroscopy. The photocarriers are rapidly localized to shallow tail states within a typical time constant of several picoseconds to a few tens of picoseconds. The sub-nanosecond PL decay dynamics indicate the importance of multiple carrier trapping processes in the shallow tail states. Therefore, it is concluded that the tail states dominate the optical responses of Cu2ZnSnS4 single crystals.

AB - We have studied the photocarrier localization and recombination dynamics in Cu2ZnSnS4 single crystals at room temperature. The band-gap energy and tail states below the band edge were evaluated by a combination of photoluminescence (PL), PL excitation, photocurrent, and femtosecond transient reflectivity spectroscopy. The photocarriers are rapidly localized to shallow tail states within a typical time constant of several picoseconds to a few tens of picoseconds. The sub-nanosecond PL decay dynamics indicate the importance of multiple carrier trapping processes in the shallow tail states. Therefore, it is concluded that the tail states dominate the optical responses of Cu2ZnSnS4 single crystals.

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Photocarrier localization and recombination dynamics in Cu ₂ZnSnS₄ single crystals

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