Photoelectron spectroscopy of silicon-and germanium-fluorine binary cluster anions (SinF-m, GenF-m)

Koji Kaya, Hiroshi Kawamata, Yuichi Negishi, Takasuke Hayase, Reiko Kishi, Atsushi Nakajima

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5 Citations (Scopus)

Abstract

Electronic properties of silicon-fluorine and germanium-fluorine cluster anions (SinF-m; n = 1-9, m = 1-3, GenF-m; n=1-9, m=1-3) were investigated by photoelectron spectroscopy using a magnetic-bottle type electron spectrometer. The binary cluster anions were generated by a laser vaporization of a silicon/germanium rod in an He carrier gas mixed with a small amount of SiF4 or F2 gas. Comparison between photoelectron spectra of SinF-/GenF- and Si-n/Ge-n (n=4-9) gives the insight that the doped F atom can remove one electron from the corresponding Si-n/Ge-n cluster without any serious rearrangement of Sin/Gen framework, because only the first peak of Si-n/Ge-n, corresponding singly occupied molecular orbital (SOMO), disappears and other successive spectral features are unchanged with the F atom doping

Original languageEnglish
Pages (from-to)5-9
Number of pages5
JournalZeitschrift fur Physik D-Atoms Molecules and Clusters
Volume40
Issue number1
DOIs
Publication statusPublished - 1997

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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