PHOTOIONIZATION CROSS SECTIONS IN VANADIUM-DOPED SILICON.

E. Ohta, T. Kunio, Tetsuya Sato, M. Sakata

Research output: Contribution to journalArticle

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Abstract

Vanadium-doped silicon has been investigated using a photocapacitance method on n** plus -p and p** plus -n junctions. The photoionization cross-section spectra showed two levels at 0. 47 ev below the conduction band and 0. 485 ev above the valence band, and the complementary optical transition threshold energies were 0. 665 and 0. 77 ev, respectively. For the E//c minus 0. 47-ev level, the electron photoionization cross section at the threshold energy depends significantly on temperature. This would be due to the photothermal ionization process via the excited states. For the E// upsilon plus 0. 485-ev level, the sum of the threshold energies in electron and hole emission processes was greater than the band gap. This indicates that phonon broadening due to lattice relaxation occurs in the photoionization spectrum. According to the configuration coordinate model, the local phonon energy and the lattice relaxation energy are approximately 350 K and 0. 13 ev, respectively.

Original languageEnglish
Pages (from-to)2890-2895
Number of pages6
JournalJournal of Applied Physics
Volume56
Issue number10
DOIs
Publication statusPublished - 1984 Jan 1

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vanadium
photoionization
cross sections
silicon
thresholds
energy
optical transition
electron emission
conduction bands
valence
ionization
configurations
excitation
electrons
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

PHOTOIONIZATION CROSS SECTIONS IN VANADIUM-DOPED SILICON. / Ohta, E.; Kunio, T.; Sato, Tetsuya; Sakata, M.

In: Journal of Applied Physics, Vol. 56, No. 10, 01.01.1984, p. 2890-2895.

Research output: Contribution to journalArticle

Ohta, E. ; Kunio, T. ; Sato, Tetsuya ; Sakata, M. / PHOTOIONIZATION CROSS SECTIONS IN VANADIUM-DOPED SILICON. In: Journal of Applied Physics. 1984 ; Vol. 56, No. 10. pp. 2890-2895.
@article{950fa1ad03e746ee99bb2cdc68c3c621,
title = "PHOTOIONIZATION CROSS SECTIONS IN VANADIUM-DOPED SILICON.",
abstract = "Vanadium-doped silicon has been investigated using a photocapacitance method on n** plus -p and p** plus -n junctions. The photoionization cross-section spectra showed two levels at 0. 47 ev below the conduction band and 0. 485 ev above the valence band, and the complementary optical transition threshold energies were 0. 665 and 0. 77 ev, respectively. For the E//c minus 0. 47-ev level, the electron photoionization cross section at the threshold energy depends significantly on temperature. This would be due to the photothermal ionization process via the excited states. For the E// upsilon plus 0. 485-ev level, the sum of the threshold energies in electron and hole emission processes was greater than the band gap. This indicates that phonon broadening due to lattice relaxation occurs in the photoionization spectrum. According to the configuration coordinate model, the local phonon energy and the lattice relaxation energy are approximately 350 K and 0. 13 ev, respectively.",
author = "E. Ohta and T. Kunio and Tetsuya Sato and M. Sakata",
year = "1984",
month = "1",
day = "1",
doi = "10.1063/1.333827",
language = "English",
volume = "56",
pages = "2890--2895",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - PHOTOIONIZATION CROSS SECTIONS IN VANADIUM-DOPED SILICON.

AU - Ohta, E.

AU - Kunio, T.

AU - Sato, Tetsuya

AU - Sakata, M.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - Vanadium-doped silicon has been investigated using a photocapacitance method on n** plus -p and p** plus -n junctions. The photoionization cross-section spectra showed two levels at 0. 47 ev below the conduction band and 0. 485 ev above the valence band, and the complementary optical transition threshold energies were 0. 665 and 0. 77 ev, respectively. For the E//c minus 0. 47-ev level, the electron photoionization cross section at the threshold energy depends significantly on temperature. This would be due to the photothermal ionization process via the excited states. For the E// upsilon plus 0. 485-ev level, the sum of the threshold energies in electron and hole emission processes was greater than the band gap. This indicates that phonon broadening due to lattice relaxation occurs in the photoionization spectrum. According to the configuration coordinate model, the local phonon energy and the lattice relaxation energy are approximately 350 K and 0. 13 ev, respectively.

AB - Vanadium-doped silicon has been investigated using a photocapacitance method on n** plus -p and p** plus -n junctions. The photoionization cross-section spectra showed two levels at 0. 47 ev below the conduction band and 0. 485 ev above the valence band, and the complementary optical transition threshold energies were 0. 665 and 0. 77 ev, respectively. For the E//c minus 0. 47-ev level, the electron photoionization cross section at the threshold energy depends significantly on temperature. This would be due to the photothermal ionization process via the excited states. For the E// upsilon plus 0. 485-ev level, the sum of the threshold energies in electron and hole emission processes was greater than the band gap. This indicates that phonon broadening due to lattice relaxation occurs in the photoionization spectrum. According to the configuration coordinate model, the local phonon energy and the lattice relaxation energy are approximately 350 K and 0. 13 ev, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0021517290&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021517290&partnerID=8YFLogxK

U2 - 10.1063/1.333827

DO - 10.1063/1.333827

M3 - Article

VL - 56

SP - 2890

EP - 2895

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

ER -