Photoluminescence and photoconductance in annealed ZnO thin films

R. Ghosh, B. Mallik, Shinobu Fujihara, D. Basak

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

Sol-gel ZnO films have been annealed at 500°C under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience.

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalChemical Physics Letters
Volume403
Issue number4-6
DOIs
Publication statusPublished - 2005 Feb 25

Fingerprint

Photoluminescence
photoluminescence
Thin films
thin films
Nitrogen
Vacuum
ambience
nitrogen
vacuum
Charge carriers
Sol-gels
charge carriers
gels
Annealing
X ray diffraction
optimization
annealing
air
Air
diffraction

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

Photoluminescence and photoconductance in annealed ZnO thin films. / Ghosh, R.; Mallik, B.; Fujihara, Shinobu; Basak, D.

In: Chemical Physics Letters, Vol. 403, No. 4-6, 25.02.2005, p. 415-419.

Research output: Contribution to journalArticle

Ghosh, R. ; Mallik, B. ; Fujihara, Shinobu ; Basak, D. / Photoluminescence and photoconductance in annealed ZnO thin films. In: Chemical Physics Letters. 2005 ; Vol. 403, No. 4-6. pp. 415-419.
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