Photoluminescence and photoconductance in annealed ZnO thin films

R. Ghosh, B. Mallik, S. Fujihara, D. Basak

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Sol-gel ZnO films have been annealed at 500°C under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience.

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalChemical Physics Letters
Volume403
Issue number4-6
DOIs
Publication statusPublished - 2005 Feb 25

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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