Photoluminescence characterization of a shallow state in CuGaSe2 thin films grown by molecular beam epitaxy

A. Yamada, P. J. Fons, S. Niki, H. Oyanagi

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CuGaSe2 thin films were grown on [001]-oriented GaAs substrates then photoluminescence measurements were carried out at low temperature. An emission peaked at 1.62 eV, which is generally observed in Cu-rich condition, can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. Temperature dependent photoluminescence revealed the ionization energies of these states to be 3.4 and 108 meV, respectively. The 108 meV state is attributed to a donor and the other to a shallow acceptor.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Issue number6-7
Publication statusPublished - 1997
Externally publishedYes


  • CCS
  • CuGaSe
  • MBE

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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