CuGaSe2 thin films were grown on -oriented GaAs substrates then photoluminescence measurements were carried out at low temperature. An emission peaked at 1.62 eV, which is generally observed in Cu-rich condition, can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. Temperature dependent photoluminescence revealed the ionization energies of these states to be 3.4 and 108 meV, respectively. The 108 meV state is attributed to a donor and the other to a shallow acceptor.
|Number of pages||6|
|Journal||Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory|
|Publication status||Published - 1997|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering