Abstract
CuGaSe2 thin films were grown on [001]-oriented GaAs substrates then photoluminescence measurements were carried out at low temperature. An emission peaked at 1.62 eV, which is generally observed in Cu-rich condition, can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. Temperature dependent photoluminescence revealed the ionization energies of these states to be 3.4 and 108 meV, respectively. The 108 meV state is attributed to a donor and the other to a shallow acceptor.
| Original language | English |
|---|---|
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory |
| Volume | 61 |
| Issue number | 6-7 |
| Publication status | Published - 1997 |
| Externally published | Yes |
Keywords
- CCS
- CuGaSe
- MBE
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Yamada, A., Fons, P. J., Niki, S., & Oyanagi, H. (1997). Photoluminescence characterization of a shallow state in CuGaSe2 thin films grown by molecular beam epitaxy. Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory, 61(6-7), 1-6.