Photoluminescence characterization of a shallow state in CuGaSe2 thin films grown by molecular beam epitaxy

A. Yamada; P. J. Fons; S. Niki; H. Oyanagi

Photoluminescence characterization of a shallow state in CuGaSe₂ thin films grown by molecular beam epitaxy

A. Yamada, P. J. Fons, S. Niki, H. Oyanagi

Research output: Contribution to journal › Article › peer-review

Abstract

CuGaSe₂ thin films were grown on [001]-oriented GaAs substrates then photoluminescence measurements were carried out at low temperature. An emission peaked at 1.62 eV, which is generally observed in Cu-rich condition, can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. Temperature dependent photoluminescence revealed the ionization energies of these states to be 3.4 and 108 meV, respectively. The 108 meV state is attributed to a donor and the other to a shallow acceptor.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume	61
Issue number	6-7
Publication status	Published - 1997
Externally published	Yes

Keywords

CCS
CuGaSe
MBE

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{67da6caa00e4467ca170d44176b528a8,

title = "Photoluminescence characterization of a shallow state in CuGaSe2 thin films grown by molecular beam epitaxy",

abstract = "CuGaSe2 thin films were grown on [001]-oriented GaAs substrates then photoluminescence measurements were carried out at low temperature. An emission peaked at 1.62 eV, which is generally observed in Cu-rich condition, can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. Temperature dependent photoluminescence revealed the ionization energies of these states to be 3.4 and 108 meV, respectively. The 108 meV state is attributed to a donor and the other to a shallow acceptor.",

keywords = "CCS, CuGaSe, MBE",

author = "A. Yamada and Fons, {P. J.} and S. Niki and H. Oyanagi",

year = "1997",

language = "English",

volume = "61",

pages = "1--6",

journal = "Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory",

issn = "0366-9092",

publisher = "Denshi Gijutsu Sogo Kenkyujo",

number = "6-7",

}

TY - JOUR

T1 - Photoluminescence characterization of a shallow state in CuGaSe2 thin films grown by molecular beam epitaxy

AU - Yamada, A.

AU - Fons, P. J.

AU - Niki, S.

AU - Oyanagi, H.

PY - 1997

Y1 - 1997

N2 - CuGaSe2 thin films were grown on [001]-oriented GaAs substrates then photoluminescence measurements were carried out at low temperature. An emission peaked at 1.62 eV, which is generally observed in Cu-rich condition, can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. Temperature dependent photoluminescence revealed the ionization energies of these states to be 3.4 and 108 meV, respectively. The 108 meV state is attributed to a donor and the other to a shallow acceptor.

AB - CuGaSe2 thin films were grown on [001]-oriented GaAs substrates then photoluminescence measurements were carried out at low temperature. An emission peaked at 1.62 eV, which is generally observed in Cu-rich condition, can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. Temperature dependent photoluminescence revealed the ionization energies of these states to be 3.4 and 108 meV, respectively. The 108 meV state is attributed to a donor and the other to a shallow acceptor.

KW - CCS

KW - CuGaSe

KW - MBE

UR - http://www.scopus.com/inward/record.url?scp=0031384068&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031384068&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031384068

VL - 61

SP - 1

EP - 6

JO - Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory

JF - Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory

SN - 0366-9092

IS - 6-7

ER -