Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

T. Fukushima; Y. Hijikata; H. Yaguchi; S. Yoshida; M. Okano; M. Yoshita; H. Akiyama; S. Kuboya; R. Katayama; K. Onabe

doi:10.1016/j.physe.2009.12.011

Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.

Original language	English
Pages (from-to)	2529-2531
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/j.physe.2009.12.011
Publication status	Published - 2010 Sept
Externally published	Yes

Keywords

Isoelectronic trap
Single photon
δ-doping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2009.12.011

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title = "Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A",

abstract = "We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.",

keywords = "Isoelectronic trap, Single photon, δ-doping",

author = "T. Fukushima and Y. Hijikata and H. Yaguchi and S. Yoshida and M. Okano and M. Yoshita and H. Akiyama and S. Kuboya and R. Katayama and K. Onabe",

note = "Funding Information: This study was partially supported by Grant-in-Aid for Scientific Research (B) (No. 21360004 ), Japan Society for the Promotion of Science.",

year = "2010",

month = sep,

doi = "10.1016/j.physe.2009.12.011",

language = "English",

volume = "42",

pages = "2529--2531",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "10",

}

TY - JOUR

T1 - Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

AU - Fukushima, T.

AU - Hijikata, Y.

AU - Yaguchi, H.

AU - Yoshida, S.

AU - Okano, M.

AU - Yoshita, M.

AU - Akiyama, H.

AU - Kuboya, S.

AU - Katayama, R.

AU - Onabe, K.

N1 - Funding Information: This study was partially supported by Grant-in-Aid for Scientific Research (B) (No. 21360004 ), Japan Society for the Promotion of Science.

PY - 2010/9

Y1 - 2010/9

N2 - We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.

AB - We have studied photoluminescence (PL) observed from single isoelectronic traps formed by nitrogen pairs in nitrogen δ-doped GaAs layers grown on GaAs(1 1 1)A substrates. The PL was composed of a single peak with a narrow linewidth of ∼80 μeV. Polarized PL measurements confirmed that the emission from single isoelectronic traps in nitrogen δ-doped GaAs(1 1 1) is unpolarized irrespective of nitrogen pair arrangements. These results can be explained by in-plane isotropy of the samples, which is consistent with the symmetrical property of GaAs(1 1 1), and demonstrate that utilizing (1 1 1) substrate is an effective means for obtaining unpolarized single photons, which are desirable for the application to quantum cryptography.

KW - Isoelectronic trap

KW - Single photon

KW - δ-doping

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U2 - 10.1016/j.physe.2009.12.011

DO - 10.1016/j.physe.2009.12.011

M3 - Article

AN - SCOPUS:77958003985

SN - 1386-9477

VL - 42

SP - 2529

EP - 2531

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 10

ER -

Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A

Abstract

Keywords

ASJC Scopus subject areas

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