Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

T. Ishikawa, K. Koga, T. Itahashi, L. S. Vlasenko, K. M. Itoh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report luminescence from spin triplet states of excitons bound to interstitial carbon-interstitial oxygen defects in silicon. The peak, which we call CT-line, has an energy 2.64 meV lower than 790 meV (C-line), and splits into three peaks by application of magnetic field. Moreover, its peak position does not depend on the angle between the magnetic field direction and crystallographic orientation indicating the quenching of orbital angular momentum of the hole bound to the defect. These observations lead us to conclude that the CT-line is the photoluminescence from a triplet state.

Original languageEnglish
Pages (from-to)4552-4554
Number of pages3
JournalPhysica B: Condensed Matter
Volume404
Issue number23-24
DOIs
Publication statusPublished - 2009 Dec 15

Keywords

  • C-line
  • Photoluminescence
  • Silicon
  • Spin triplet state

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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