We have studied the effects of (i) impurity doping, (ii) rapid thermal annealing, and (iii) crystal polarity control on photoluminescence spectra in the band-edge emission region of high quality ZnO. As a result, we have discussed the possible lattice defects responsible for some photoluminescence emission peaks, namely (i) peak I8 appears at 3.3596 eV, (ii) peak I9 appears at 3.3565 eV and (iii) peak G appears at 3.3327 eV.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2006 May 8|
|Event||12th International Conference on II-VI Compounds - Warsaw, Poland|
Duration: 2005 Sep 12 → 2005 Sep 16
ASJC Scopus subject areas
- Condensed Matter Physics