Photoluminescence studies of implantation damage centers in30Si

S. Hayama; G. Davies; K. M. Itoh

doi:10.1063/1.1767965

Photoluminescence studies of implantation damage centers in³⁰Si

S. Hayama, G. Davies, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between ^natSi and ³⁰Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in ^natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.

Original language	English
Pages (from-to)	1754-1756
Number of pages	3
Journal	Journal of Applied Physics
Volume	96
Issue number	3
DOIs	https://doi.org/10.1063/1.1767965
Publication status	Published - 2004 Aug 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1767965

Cite this

@article{bd56325684cb47639b83b2ee3a28c0f4,

title = "Photoluminescence studies of implantation damage centers in30Si",

abstract = "The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between natSi and 30Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.",

author = "S. Hayama and G. Davies and Itoh, {K. M.}",

note = "Funding Information: We gratefully acknowledge Dr. C. Jeynes of the Surrey Ion Beam Centre, UK for his help with sample implantation. The work was supported by the EPSRC, UK (Grant No. GR∕R10820 and No. GR∕R24531∕01) and, in part, by a Grant-in-Aid for Scientific Research in Priority Areas Semiconductor Nanospintronics (Grant No. 14076215). ",

year = "2004",

month = aug,

day = "1",

doi = "10.1063/1.1767965",

language = "English",

volume = "96",

pages = "1754--1756",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Photoluminescence studies of implantation damage centers in30Si

AU - Hayama, S.

AU - Davies, G.

AU - Itoh, K. M.

N1 - Funding Information: We gratefully acknowledge Dr. C. Jeynes of the Surrey Ion Beam Centre, UK for his help with sample implantation. The work was supported by the EPSRC, UK (Grant No. GR∕R10820 and No. GR∕R24531∕01) and, in part, by a Grant-in-Aid for Scientific Research in Priority Areas Semiconductor Nanospintronics (Grant No. 14076215).

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between natSi and 30Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.

AB - The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between natSi and 30Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.

UR - http://www.scopus.com/inward/record.url?scp=4043133210&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4043133210&partnerID=8YFLogxK

U2 - 10.1063/1.1767965

DO - 10.1063/1.1767965

M3 - Article

AN - SCOPUS:4043133210

SN - 0021-8979

VL - 96

SP - 1754

EP - 1756

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Photoluminescence studies of implantation damage centers in³⁰Si

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this