Photoluminescence studies of implantation damage centers in30Si

S. Hayama, G. Davies, K. M. Itoh

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Abstract

The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between natSi and 30Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.

Original languageEnglish
Pages (from-to)1754-1756
Number of pages3
JournalJournal of Applied Physics
Volume96
Issue number3
DOIs
Publication statusPublished - 2004 Aug 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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