Photoluminescence studies of implantation damage centers in30Si

S. Hayama, G. Davies, Kohei M Itoh

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The effects of changing the lattice isotopes on defects produced by silicon implantation were analyzed using photoluminescence (PL) technique. It was observed that X and W zero-phonon lines (ZPLs) shift between natSi and 30Si was +1.55(5) and +1.27(5) meV. ZPL shifts were caused by the effects of the electron-phonon coupling to the continuum of lattice modes. X centers had low vibrational modes (LVMs) of quanta 66.2, and 69.0 meV in natSi, and W center has LVMs of 70.0 meV. It was shown that the assignments of the X and W centers to the self-interstitial clusters supported the existence of above modes.

Original languageEnglish
Pages (from-to)1754-1756
Number of pages3
JournalJournal of Applied Physics
Volume96
Issue number3
DOIs
Publication statusPublished - 2004 Aug 1

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implantation
damage
photoluminescence
vibration mode
shift
interstitials
isotopes
continuums
defects
silicon
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Photoluminescence studies of implantation damage centers in30Si. / Hayama, S.; Davies, G.; Itoh, Kohei M.

In: Journal of Applied Physics, Vol. 96, No. 3, 01.08.2004, p. 1754-1756.

Research output: Contribution to journalArticle

Hayama, S. ; Davies, G. ; Itoh, Kohei M. / Photoluminescence studies of implantation damage centers in30Si. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 3. pp. 1754-1756.
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