Photoluminescence study of radiation-enhanced dislocation glide in 4H-SiC

Rii Hirano, Yuki Sato, Hideyuki Tsuchida, Michio Tajima, Kohei M Itoh, Koji Maeda

Research output: Contribution to journalArticle

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Abstract

Expansion of Shockley stacking faults in 4H-SiC achieved by the radiation-enhanced glide of 30°-Si(g) partial dislocations has been investigated by photoluminescence experiments. The enhancement rate of the dislocation glide that was induced by light illumination in the present study was found to be governed directly by the light intensity, not by the photogenerated carriers. This fact indicates that the glide enhancement in 4H-SiC is not explained by the widely speculated mechanism that the electronic energy released on recombination of photoexcited electron-hole pairs is utilized to assist the dislocation glide. A photoionization of dislocations is proposed to be the cause of the glide enhancement.

Original languageEnglish
Article number091302
JournalApplied Physics Express
Volume5
Issue number9
DOIs
Publication statusPublished - 2012 Sep

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Dislocations (crystals)
Photoluminescence
photoluminescence
Radiation
Photoionization
Stacking faults
radiation
augmentation
Lighting
Electrons
crystal defects
luminous intensity
photoionization
Experiments
illumination
expansion
causes
electronics
energy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Photoluminescence study of radiation-enhanced dislocation glide in 4H-SiC. / Hirano, Rii; Sato, Yuki; Tsuchida, Hideyuki; Tajima, Michio; Itoh, Kohei M; Maeda, Koji.

In: Applied Physics Express, Vol. 5, No. 9, 091302, 09.2012.

Research output: Contribution to journalArticle

Hirano, Rii ; Sato, Yuki ; Tsuchida, Hideyuki ; Tajima, Michio ; Itoh, Kohei M ; Maeda, Koji. / Photoluminescence study of radiation-enhanced dislocation glide in 4H-SiC. In: Applied Physics Express. 2012 ; Vol. 5, No. 9.
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