Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC

Rii Hirano, Yuki Sato, Michio Tajima, Kohei M Itoh, Koji Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We investigated expansion velocities of Shockley stacking faults (SSFs) in 4H-silicon carbide under laser illumination using photoluminescence methods. The experiments showed that the velocity of SSF expansion or the glide velocity of SSF-bounding 30°-Si(g) partial dislocations (PD) is superlinearly dependent on the excitation intensity. We estimated the sample temperature by analyzing the broadening of band-edge emission and concluded that the lattice heating by laser illumination is not the cause of the enhanced dislocation glide. The superlinear dependence can be accounted for by a photo-induced sign reversal of the effective formation energy of the SSF acting as the driving force of SSF expansion under the illumination.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages395-398
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 2011 Sep 112011 Sep 16

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

Fingerprint

Stacking faults
crystal defects
Photoluminescence
photoluminescence
expansion
Lighting
illumination
Lasers
energy of formation
Dislocations (crystals)
Silicon carbide
silicon carbides
lasers
Heating
heating
causes
excitation
Experiments
Temperature
temperature

Keywords

  • 4H-SiC
  • Photoluminescence
  • Radiation-enhanced dislocation glide
  • Stacking faults

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Hirano, R., Sato, Y., Tajima, M., Itoh, K. M., & Maeda, K. (2012). Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC. In Materials Science Forum (Vol. 717-720, pp. 395-398). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.395

Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC. / Hirano, Rii; Sato, Yuki; Tajima, Michio; Itoh, Kohei M; Maeda, Koji.

Materials Science Forum. Vol. 717-720 2012. p. 395-398 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hirano, R, Sato, Y, Tajima, M, Itoh, KM & Maeda, K 2012, Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC. in Materials Science Forum. vol. 717-720, Materials Science Forum, vol. 717-720, pp. 395-398, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 11/9/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.395
Hirano R, Sato Y, Tajima M, Itoh KM, Maeda K. Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC. In Materials Science Forum. Vol. 717-720. 2012. p. 395-398. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.395
Hirano, Rii ; Sato, Yuki ; Tajima, Michio ; Itoh, Kohei M ; Maeda, Koji. / Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC. Materials Science Forum. Vol. 717-720 2012. pp. 395-398 (Materials Science Forum).
@inproceedings{94075cec230342d8be45f169f08b8308,
title = "Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC",
abstract = "We investigated expansion velocities of Shockley stacking faults (SSFs) in 4H-silicon carbide under laser illumination using photoluminescence methods. The experiments showed that the velocity of SSF expansion or the glide velocity of SSF-bounding 30°-Si(g) partial dislocations (PD) is superlinearly dependent on the excitation intensity. We estimated the sample temperature by analyzing the broadening of band-edge emission and concluded that the lattice heating by laser illumination is not the cause of the enhanced dislocation glide. The superlinear dependence can be accounted for by a photo-induced sign reversal of the effective formation energy of the SSF acting as the driving force of SSF expansion under the illumination.",
keywords = "4H-SiC, Photoluminescence, Radiation-enhanced dislocation glide, Stacking faults",
author = "Rii Hirano and Yuki Sato and Michio Tajima and Itoh, {Kohei M} and Koji Maeda",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.395",
language = "English",
isbn = "9783037854198",
volume = "717-720",
series = "Materials Science Forum",
pages = "395--398",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC

AU - Hirano, Rii

AU - Sato, Yuki

AU - Tajima, Michio

AU - Itoh, Kohei M

AU - Maeda, Koji

PY - 2012

Y1 - 2012

N2 - We investigated expansion velocities of Shockley stacking faults (SSFs) in 4H-silicon carbide under laser illumination using photoluminescence methods. The experiments showed that the velocity of SSF expansion or the glide velocity of SSF-bounding 30°-Si(g) partial dislocations (PD) is superlinearly dependent on the excitation intensity. We estimated the sample temperature by analyzing the broadening of band-edge emission and concluded that the lattice heating by laser illumination is not the cause of the enhanced dislocation glide. The superlinear dependence can be accounted for by a photo-induced sign reversal of the effective formation energy of the SSF acting as the driving force of SSF expansion under the illumination.

AB - We investigated expansion velocities of Shockley stacking faults (SSFs) in 4H-silicon carbide under laser illumination using photoluminescence methods. The experiments showed that the velocity of SSF expansion or the glide velocity of SSF-bounding 30°-Si(g) partial dislocations (PD) is superlinearly dependent on the excitation intensity. We estimated the sample temperature by analyzing the broadening of band-edge emission and concluded that the lattice heating by laser illumination is not the cause of the enhanced dislocation glide. The superlinear dependence can be accounted for by a photo-induced sign reversal of the effective formation energy of the SSF acting as the driving force of SSF expansion under the illumination.

KW - 4H-SiC

KW - Photoluminescence

KW - Radiation-enhanced dislocation glide

KW - Stacking faults

UR - http://www.scopus.com/inward/record.url?scp=84861432575&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861432575&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.717-720.395

DO - 10.4028/www.scientific.net/MSF.717-720.395

M3 - Conference contribution

AN - SCOPUS:84861432575

SN - 9783037854198

VL - 717-720

T3 - Materials Science Forum

SP - 395

EP - 398

BT - Materials Science Forum

ER -