Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs

Teruyuki Ohashi, Shunri Oda, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    This paper presents a comprehensive study of the strain effects on carrier mobility in extremely thin SOI MOSFETs. We demonstrated that the mobility enhancement ratio (Δμe/ μe) increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm under uniaxial <110> tensile stress parallel to the channel. On the other hand, under uniaxial <110> stress perpendicular to the channel (σ//), Δμe/ μedecreases as TSOI decreases in extremely thin SOI MOSFETs with TSOI of less than 10 nm. By measuring the back gate bias dependence of the Δμe/ μe, it is concluded that this Δμe/ μeincrease is originates from the increase of deformation potential (Dac) around MOS interfaces, as well as from the change of effective mass.

    Original languageEnglish
    Title of host publicationSiGe, Ge, and Related Compounds 5
    Subtitle of host publicationMaterials, Processing, and Devices
    Pages171-174
    Number of pages4
    Edition9
    DOIs
    Publication statusPublished - 2012 Dec 1
    Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
    Duration: 2012 Oct 72012 Oct 12

    Publication series

    NameECS Transactions
    Number9
    Volume50
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
    CountryUnited States
    CityHonolulu, HI
    Period12/10/712/10/12

    ASJC Scopus subject areas

    • Engineering(all)

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