Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs

Teruyuki Ohashi; Shunri Oda; Ken Uchida

doi:10.1149/05009.0171ecst

Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs

Teruyuki Ohashi, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper presents a comprehensive study of the strain effects on carrier mobility in extremely thin SOI MOSFETs. We demonstrated that the mobility enhancement ratio (Δμ_e/ μ_e) increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm under uniaxial <110> tensile stress parallel to the channel. On the other hand, under uniaxial <110> stress perpendicular to the channel (σ//), Δμ_e/ μ_edecreases as TSOI decreases in extremely thin SOI MOSFETs with TSOI of less than 10 nm. By measuring the back gate bias dependence of the Δμ_e/ μ_e, it is concluded that this Δμ_e/ μ_eincrease is originates from the increase of deformation potential (D_ac) around MOS interfaces, as well as from the change of effective mass.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	171-174
Number of pages	4
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0171ecst
Publication status	Published - 2013
Externally published	Yes
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 2012 Oct 7 → 2012 Oct 12

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	12/10/7 → 12/10/12

ASJC Scopus subject areas

Engineering(all)

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10.1149/05009.0171ecst

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Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs. / Ohashi, Teruyuki; Oda, Shunri; Uchida, Ken.
SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. p. 171-174 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ohashi, T, Oda, S & Uchida, K 2013, Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 171-174, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05009.0171ecst

@inproceedings{000356100ffb484f888c80e97af972b7,

title = "Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs",

abstract = "This paper presents a comprehensive study of the strain effects on carrier mobility in extremely thin SOI MOSFETs. We demonstrated that the mobility enhancement ratio (Δμe/ μe) increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm under uniaxial <110> tensile stress parallel to the channel. On the other hand, under uniaxial <110> stress perpendicular to the channel (σ//), Δμe/ μedecreases as TSOI decreases in extremely thin SOI MOSFETs with TSOI of less than 10 nm. By measuring the back gate bias dependence of the Δμe/ μe, it is concluded that this Δμe/ μeincrease is originates from the increase of deformation potential (Dac) around MOS interfaces, as well as from the change of effective mass.",

author = "Teruyuki Ohashi and Shunri Oda and Ken Uchida",

year = "2013",

doi = "10.1149/05009.0171ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "171--174",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

TY - GEN

T1 - Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs

AU - Ohashi, Teruyuki

AU - Oda, Shunri

AU - Uchida, Ken

PY - 2013

Y1 - 2013

N2 - This paper presents a comprehensive study of the strain effects on carrier mobility in extremely thin SOI MOSFETs. We demonstrated that the mobility enhancement ratio (Δμe/ μe) increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm under uniaxial <110> tensile stress parallel to the channel. On the other hand, under uniaxial <110> stress perpendicular to the channel (σ//), Δμe/ μedecreases as TSOI decreases in extremely thin SOI MOSFETs with TSOI of less than 10 nm. By measuring the back gate bias dependence of the Δμe/ μe, it is concluded that this Δμe/ μeincrease is originates from the increase of deformation potential (Dac) around MOS interfaces, as well as from the change of effective mass.

AB - This paper presents a comprehensive study of the strain effects on carrier mobility in extremely thin SOI MOSFETs. We demonstrated that the mobility enhancement ratio (Δμe/ μe) increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm under uniaxial <110> tensile stress parallel to the channel. On the other hand, under uniaxial <110> stress perpendicular to the channel (σ//), Δμe/ μedecreases as TSOI decreases in extremely thin SOI MOSFETs with TSOI of less than 10 nm. By measuring the back gate bias dependence of the Δμe/ μe, it is concluded that this Δμe/ μeincrease is originates from the increase of deformation potential (Dac) around MOS interfaces, as well as from the change of effective mass.

UR - http://www.scopus.com/inward/record.url?scp=84885731812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885731812&partnerID=8YFLogxK

U2 - 10.1149/05009.0171ecst

DO - 10.1149/05009.0171ecst

M3 - Conference contribution

AN - SCOPUS:84885731812

SN - 9781607683575

T3 - ECS Transactions

SP - 171

EP - 174

BT - SiGe, Ge, and Related Compounds 5

PB - Electrochemical Society Inc.

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

Y2 - 7 October 2012 through 12 October 2012

ER -

Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs

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