Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs

Teruyuki Ohashi, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a comprehensive study of the strain effects on carrier mobility in extremely thin SOI MOSFETs. We demonstrated that the mobility enhancement ratio (Δμe/ μe) increases as SOI thickness (TSOI) decreases from 60 nm to 4 nm under uniaxial <110> tensile stress parallel to the channel. On the other hand, under uniaxial <110> stress perpendicular to the channel (σ//), Δμe/ μedecreases as TSOI decreases in extremely thin SOI MOSFETs with TSOI of less than 10 nm. By measuring the back gate bias dependence of the Δμe/ μe, it is concluded that this Δμe/ μeincrease is originates from the increase of deformation potential (Dac) around MOS interfaces, as well as from the change of effective mass.

Original languageEnglish
Title of host publicationECS Transactions
Pages171-174
Number of pages4
Volume50
Edition9
DOIs
Publication statusPublished - 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ohashi, T., Oda, S., & Uchida, K. (2012). Physical mechanism of enhanced uniaxial stress effect on carrier mobility in ETSOI MOSFETs. In ECS Transactions (9 ed., Vol. 50, pp. 171-174) https://doi.org/10.1149/05009.0171ecst