Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

Ken Uchida, Tejas Krishnamohan, Krishna C. Saraswat, Yoshio Nishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

144 Citations (Scopus)

Abstract

The physical mechanisms of μe enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔEC, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔEC and Δm*, experimental μe enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μe enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I d,sat are also discussed.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages129-132
Number of pages4
Volume2005
Publication statusPublished - 2005
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 2005 Dec 52005 Dec 7

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05/12/505/12/7

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Uchida, K., Krishnamohan, T., Saraswat, K. C., & Nishi, Y. (2005). Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2005, pp. 129-132). [1609286]