Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

Ken Uchida, Tejas Krishnamohan, Krishna C. Saraswat, Yoshio Nishi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    144 Citations (Scopus)

    Abstract

    The physical mechanisms of μe enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔEC, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔEC and Δm*, experimental μe enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μe enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I d,sat are also discussed.

    Original languageEnglish
    Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
    Pages129-132
    Number of pages4
    Publication statusPublished - 2005 Dec 1
    EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
    Duration: 2005 Dec 52005 Dec 7

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    Volume2005
    ISSN (Print)0163-1918

    Other

    OtherIEEE International Electron Devices Meeting, 2005 IEDM
    CountryUnited States
    CityWashington, DC, MD
    Period05/12/505/12/7

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Uchida, K., Krishnamohan, T., Saraswat, K. C., & Nishi, Y. (2005). Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 129-132). [1609286] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).