Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs

Masumi Saitoh; Nobuaki Yasutake; Yukio Nakabayashi; Ken Uchida; Toshinori Numata

doi:10.1109/TED.2010.2059592

Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Threshold voltage V_th variations in scaled (110) n/pMOSFETs are systematically investigated. V_th variations in (110) nMOSFETs and pMOSFETs with high channel dose are larger than those in (100) nMOSFETs and pMOSFETs, respectively. Physical origins of V_th variation enhancement in (110) MOSFETs are analyzed on the basis of the substrate impurity concentration dependence of the body effect and S factor variations. It is found that the depletion width variations due to boron ion channeling and the interface trap density variations enhance V_th variations in boron-doped (110) nMOSFETs and that the interface fixed charge variations enhance V_th variations in arsenic-doped (110) pMOSFETs. An undoped channel combined with a steep boron profile and moderate phosphorus doping into the surface are desirable to minimize V_th variations in (110) nMOSFETs and pMOSFETs, respectively.

Original language	English
Article number	5549882
Pages (from-to)	2493-2498
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	10
DOIs	https://doi.org/10.1109/TED.2010.2059592
Publication status	Published - 2010 Oct

Keywords

(110)
Channeling
MOSFETs
depletion width
fixed charge
interface trap
threshold voltage
variations

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2010.2059592

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title = "Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs",

abstract = "Threshold voltage Vth variations in scaled (110) n/pMOSFETs are systematically investigated. Vth variations in (110) nMOSFETs and pMOSFETs with high channel dose are larger than those in (100) nMOSFETs and pMOSFETs, respectively. Physical origins of Vth variation enhancement in (110) MOSFETs are analyzed on the basis of the substrate impurity concentration dependence of the body effect and S factor variations. It is found that the depletion width variations due to boron ion channeling and the interface trap density variations enhance Vth variations in boron-doped (110) nMOSFETs and that the interface fixed charge variations enhance Vth variations in arsenic-doped (110) pMOSFETs. An undoped channel combined with a steep boron profile and moderate phosphorus doping into the surface are desirable to minimize Vth variations in (110) nMOSFETs and pMOSFETs, respectively.",

keywords = "(110), Channeling, MOSFETs, depletion width, fixed charge, interface trap, threshold voltage, variations",

author = "Masumi Saitoh and Nobuaki Yasutake and Yukio Nakabayashi and Ken Uchida and Toshinori Numata",

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AU - Saitoh, Masumi

AU - Yasutake, Nobuaki

AU - Nakabayashi, Yukio

AU - Uchida, Ken

AU - Numata, Toshinori

PY - 2010/10

Y1 - 2010/10

N2 - Threshold voltage Vth variations in scaled (110) n/pMOSFETs are systematically investigated. Vth variations in (110) nMOSFETs and pMOSFETs with high channel dose are larger than those in (100) nMOSFETs and pMOSFETs, respectively. Physical origins of Vth variation enhancement in (110) MOSFETs are analyzed on the basis of the substrate impurity concentration dependence of the body effect and S factor variations. It is found that the depletion width variations due to boron ion channeling and the interface trap density variations enhance Vth variations in boron-doped (110) nMOSFETs and that the interface fixed charge variations enhance Vth variations in arsenic-doped (110) pMOSFETs. An undoped channel combined with a steep boron profile and moderate phosphorus doping into the surface are desirable to minimize Vth variations in (110) nMOSFETs and pMOSFETs, respectively.

AB - Threshold voltage Vth variations in scaled (110) n/pMOSFETs are systematically investigated. Vth variations in (110) nMOSFETs and pMOSFETs with high channel dose are larger than those in (100) nMOSFETs and pMOSFETs, respectively. Physical origins of Vth variation enhancement in (110) MOSFETs are analyzed on the basis of the substrate impurity concentration dependence of the body effect and S factor variations. It is found that the depletion width variations due to boron ion channeling and the interface trap density variations enhance Vth variations in boron-doped (110) nMOSFETs and that the interface fixed charge variations enhance Vth variations in arsenic-doped (110) pMOSFETs. An undoped channel combined with a steep boron profile and moderate phosphorus doping into the surface are desirable to minimize Vth variations in (110) nMOSFETs and pMOSFETs, respectively.

KW - (110)

KW - Channeling

KW - MOSFETs

KW - depletion width

KW - fixed charge

KW - interface trap

KW - threshold voltage

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Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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