Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Threshold voltage Vth variations in scaled (110) n/pMOSFETs are systematically investigated. Vth variations in (110) nMOSFETs and pMOSFETs with high channel dose are larger than those in (100) nMOSFETs and pMOSFETs, respectively. Physical origins of Vth variation enhancement in (110) MOSFETs are analyzed on the basis of the substrate impurity concentration dependence of the body effect and S factor variations. It is found that the depletion width variations due to boron ion channeling and the interface trap density variations enhance Vth variations in boron-doped (110) nMOSFETs and that the interface fixed charge variations enhance Vth variations in arsenic-doped (110) pMOSFETs. An undoped channel combined with a steep boron profile and moderate phosphorus doping into the surface are desirable to minimize Vth variations in (110) nMOSFETs and pMOSFETs, respectively.

Original languageEnglish
Article number5549882
Pages (from-to)2493-2498
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number10
DOIs
Publication statusPublished - 2010 Oct
Externally publishedYes

Fingerprint

Boron
Threshold voltage
Arsenic
Phosphorus
Doping (additives)
Impurities
Ions
Substrates

Keywords

  • (110)
  • Channeling
  • depletion width
  • fixed charge
  • interface trap
  • MOSFETs
  • threshold voltage
  • variations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Saitoh, M., Yasutake, N., Nakabayashi, Y., Uchida, K., & Numata, T. (2010). Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs. IEEE Transactions on Electron Devices, 57(10), 2493-2498. [5549882]. https://doi.org/10.1109/TED.2010.2059592

Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs. / Saitoh, Masumi; Yasutake, Nobuaki; Nakabayashi, Yukio; Uchida, Ken; Numata, Toshinori.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 10, 5549882, 10.2010, p. 2493-2498.

Research output: Contribution to journalArticle

Saitoh, M, Yasutake, N, Nakabayashi, Y, Uchida, K & Numata, T 2010, 'Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs', IEEE Transactions on Electron Devices, vol. 57, no. 10, 5549882, pp. 2493-2498. https://doi.org/10.1109/TED.2010.2059592
Saitoh, Masumi ; Yasutake, Nobuaki ; Nakabayashi, Yukio ; Uchida, Ken ; Numata, Toshinori. / Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs. In: IEEE Transactions on Electron Devices. 2010 ; Vol. 57, No. 10. pp. 2493-2498.
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