Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Threshold voltage Vth variations in scaled (110) n/pMOSFETs are systematically investigated. Vth variations in (110) nMOSFETs and pMOSFETs with high channel dose are larger than those in (100) nMOSFETs and pMOSFETs, respectively. Physical origins of Vth variation enhancement in (110) MOSFETs are analyzed on the basis of the substrate impurity concentration dependence of the body effect and S factor variations. It is found that the depletion width variations due to boron ion channeling and the interface trap density variations enhance Vth variations in boron-doped (110) nMOSFETs and that the interface fixed charge variations enhance Vth variations in arsenic-doped (110) pMOSFETs. An undoped channel combined with a steep boron profile and moderate phosphorus doping into the surface are desirable to minimize Vth variations in (110) nMOSFETs and pMOSFETs, respectively.

    Original languageEnglish
    Article number5549882
    Pages (from-to)2493-2498
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Volume57
    Issue number10
    DOIs
    Publication statusPublished - 2010 Oct 1

    Keywords

    • (110)
    • Channeling
    • MOSFETs
    • depletion width
    • fixed charge
    • interface trap
    • threshold voltage
    • variations

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • Cite this

    Saitoh, M., Yasutake, N., Nakabayashi, Y., Uchida, K., & Numata, T. (2010). Physical origins of threshold voltage variation enhancement in Si(110) n/pMOSFETs. IEEE Transactions on Electron Devices, 57(10), 2493-2498. [5549882]. https://doi.org/10.1109/TED.2010.2059592