Physical understanding of fundamental properties of Si (110) pMOSFETs - Inversion-layer capacitance, mobility universality, and uniaxial stress effects

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

    Research output: Contribution to journalConference article

    28 Citations (Scopus)

    Abstract

    Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (Nsub) dependence of low-field mobility (μ): μ increase with Nsub increase in (110)/〈110〉 pFETs, is observed for the first time. High μ even in high Nsub regime in (110) pFETs is caused by large subband energy splitting. Although uniaxial stress effects on μ is weaker in high-Nsub (110) pFETs than in (100) pFETs, much higher μ without strain leads to excellent performance of strained (110)/〈110〉 pFETs.

    Original languageEnglish
    Article number4419045
    Pages (from-to)711-714
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting, IEDM
    DOIs
    Publication statusPublished - 2007 Dec 1
    Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
    Duration: 2007 Dec 102007 Dec 12

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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