Physical understanding of fundamental properties of Si (110) pMOSFETs - Inversion-layer capacitance, mobility universality, and uniaxial stress effects

Masumi Saitoh, Shigeki Kobayashi, Ken Uchida

Research output: Contribution to journalConference article

Abstract

Fundamental transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance (inversion-layer thickness) of (110) pFETs is larger (smaller) than that of (100) pFETs owing to larger effective mass normal to the surface in (110) pFETs. Peculiar substrate impurity concentration (Nsub) dependence of low-field mobility (μ): μ increase with Nsub increase in (110)/〈110〉 pFETs, is observed for the first time. High μ even in high Nsub regime in (110) pFETs is caused by large subband energy splitting. Although uniaxial stress effects on μ is weaker in high-Nsub (110) pFETs than in (100) pFETs, much higher μ without strain leads to excellent performance of strained (110)/〈110〉 pFETs.

Original languageEnglish
Article number4419045
Pages (from-to)711-714
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this