TY - JOUR
T1 - Physically based DC lifetime model for lead zirconate titanate films
AU - Garten, Lauren M.
AU - Hagiwara, Manabu
AU - Ko, Song Won
AU - Trolier-Mckinstry, Susan
N1 - Funding Information:
This work was supported by a National Security Science and Engineering Faculty Fellowship.
Publisher Copyright:
© 2017 Author(s).
PY - 2017/9/18
Y1 - 2017/9/18
N2 - Accurate lifetime predictions for Pb(Zr0.52Ti0.48)O3 thin films are critical for a number of applications, but current reliability models are not consistent with the resistance degradation mechanisms in lead zirconate titanate. In this work, the reliability and lifetime of chemical solution deposited (CSD) and sputtered Pb(Zr0.52Ti0.48)O3 thin films are characterized using highly accelerated lifetime testing (HALT) and leakage current-voltage (I-V) measurements. Temperature dependent HALT results and impedance spectroscopy show activation energies of approximately 1.2 eV for the CSD films and 0.6 eV for the sputtered films. The voltage dependent HALT results are consistent with previous reports, but do not clearly indicate what causes device failure. To understand more about the underlying physical mechanisms leading to degradation, the I-V data are fit to known conduction mechanisms, with Schottky emission having the best-fit and realistic extracted material parameters. Using the Schottky emission equation as a base, a unique model is developed to predict the lifetime under highly accelerated testing conditions based on the physical mechanisms of degradation.
AB - Accurate lifetime predictions for Pb(Zr0.52Ti0.48)O3 thin films are critical for a number of applications, but current reliability models are not consistent with the resistance degradation mechanisms in lead zirconate titanate. In this work, the reliability and lifetime of chemical solution deposited (CSD) and sputtered Pb(Zr0.52Ti0.48)O3 thin films are characterized using highly accelerated lifetime testing (HALT) and leakage current-voltage (I-V) measurements. Temperature dependent HALT results and impedance spectroscopy show activation energies of approximately 1.2 eV for the CSD films and 0.6 eV for the sputtered films. The voltage dependent HALT results are consistent with previous reports, but do not clearly indicate what causes device failure. To understand more about the underlying physical mechanisms leading to degradation, the I-V data are fit to known conduction mechanisms, with Schottky emission having the best-fit and realistic extracted material parameters. Using the Schottky emission equation as a base, a unique model is developed to predict the lifetime under highly accelerated testing conditions based on the physical mechanisms of degradation.
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U2 - 10.1063/1.4994992
DO - 10.1063/1.4994992
M3 - Article
AN - SCOPUS:85029884761
SN - 0003-6951
VL - 111
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 12
M1 - 122903
ER -