Piezoelectric photoacoustic spectra in CuGaSe2 thin films grown by molecular beam epitaxy

Kenji Yoshino, Daisuke Maruoka, Masakazu Kawahara, Atsuhiko Fukuyama, Kouji Maeda, Paul J. Fons, Shigeru Niki, Akimasa Yamada, Tetsuo Ikari

Research output: Contribution to journalConference article

Abstract

The piezoelectric photoacoustic (PPA) spectra for Cu-rich CuGaSe2 (CGS)/GaAs epitaxial layers were successfully observed between liquid nitrogen and room temperatures for the first time. Bandgap energy of CGS (A band) is estimated to be 1.72 eV at liquid nitrogen temperature. The activation energies of three possible intrinsic defect levels are estimated to be about 80, 130 and 190 meV.

Original languageEnglish
Pages (from-to)151-155
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume485
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Dec 21997 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Yoshino, K., Maruoka, D., Kawahara, M., Fukuyama, A., Maeda, K., Fons, P. J., Niki, S., Yamada, A., & Ikari, T. (1998). Piezoelectric photoacoustic spectra in CuGaSe2 thin films grown by molecular beam epitaxy. Materials Research Society Symposium - Proceedings, 485, 151-155.