Piezoelectric photoacoustic spectra of CuInSe2 thin film grown by molecular beam epitaxy

Kenji Yoshino; Atsuhiko Fukuyama; Hirosumi Yokoyama; Kouji Meada; Paul J. Fons; Akimasa Yamada; Shigeru Niki; Tetsuo Ikari

doi:10.1016/S0040-6090(98)01679-4

Piezoelectric photoacoustic spectra of CuInSe₂ thin film grown by molecular beam epitaxy

Kenji Yoshino, Atsuhiko Fukuyama, Hirosumi Yokoyama, Kouji Meada, Paul J. Fons, Akimasa Yamada, Shigeru Niki, Tetsuo Ikari

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A CuInSe₂ (CIS) film with Cu/In ratio of γ = 1.79 has been grown on (001) oriented GaAs substrate by molecular beam epitaxy (MBE) at substrate temperature of T_s = 450°C, Piezoelectric photoacoustic (PPA) spectra were measured at liquid nitrogen and room temperatures. Two signals due to the non-radiative carrier recombination that correspond to bandgap energies of CIS and GaAs substrate were obtained. After illuminating with secondary light (λ = 1100 nm), two additional PPA peaks were observed for the CIS film at liquid nitrogen temperature. These signals are due to intrinsic defects in the Cu-rich CIS film.

Original language	English
Pages (from-to)	591-593
Number of pages	3
Journal	Thin Solid Films
Volume	343-344
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01679-4
Publication status	Published - 1999
Externally published	Yes

Keywords

CuInSe (CIS)
Materials
PZT
Photoacoustic spectra
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(98)01679-4

Cite this

@article{d857a06cf793404c9251303157ca218e,

title = "Piezoelectric photoacoustic spectra of CuInSe2 thin film grown by molecular beam epitaxy",

abstract = "A CuInSe2 (CIS) film with Cu/In ratio of γ = 1.79 has been grown on (001) oriented GaAs substrate by molecular beam epitaxy (MBE) at substrate temperature of Ts = 450°C, Piezoelectric photoacoustic (PPA) spectra were measured at liquid nitrogen and room temperatures. Two signals due to the non-radiative carrier recombination that correspond to bandgap energies of CIS and GaAs substrate were obtained. After illuminating with secondary light (λ = 1100 nm), two additional PPA peaks were observed for the CIS film at liquid nitrogen temperature. These signals are due to intrinsic defects in the Cu-rich CIS film.",

keywords = "CuInSe (CIS), Materials, PZT, Photoacoustic spectra, Thin film",

author = "Kenji Yoshino and Atsuhiko Fukuyama and Hirosumi Yokoyama and Kouji Meada and Fons, {Paul J.} and Akimasa Yamada and Shigeru Niki and Tetsuo Ikari",

note = "Funding Information: The authors would like to express our sincere thanks Mr. T. Shimizu, M. Kawahara, D. Maruoka and 34. Nishimgto for their experimental assistance and useful discussions. This work was in part supported by Izumi Science And Technology Foundation.",

year = "1999",

doi = "10.1016/S0040-6090(98)01679-4",

language = "English",

volume = "343-344",

pages = "591--593",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Piezoelectric photoacoustic spectra of CuInSe2 thin film grown by molecular beam epitaxy

AU - Yoshino, Kenji

AU - Fukuyama, Atsuhiko

AU - Yokoyama, Hirosumi

AU - Meada, Kouji

AU - Fons, Paul J.

AU - Yamada, Akimasa

AU - Niki, Shigeru

AU - Ikari, Tetsuo

N1 - Funding Information: The authors would like to express our sincere thanks Mr. T. Shimizu, M. Kawahara, D. Maruoka and 34. Nishimgto for their experimental assistance and useful discussions. This work was in part supported by Izumi Science And Technology Foundation.

PY - 1999

Y1 - 1999

N2 - A CuInSe2 (CIS) film with Cu/In ratio of γ = 1.79 has been grown on (001) oriented GaAs substrate by molecular beam epitaxy (MBE) at substrate temperature of Ts = 450°C, Piezoelectric photoacoustic (PPA) spectra were measured at liquid nitrogen and room temperatures. Two signals due to the non-radiative carrier recombination that correspond to bandgap energies of CIS and GaAs substrate were obtained. After illuminating with secondary light (λ = 1100 nm), two additional PPA peaks were observed for the CIS film at liquid nitrogen temperature. These signals are due to intrinsic defects in the Cu-rich CIS film.

AB - A CuInSe2 (CIS) film with Cu/In ratio of γ = 1.79 has been grown on (001) oriented GaAs substrate by molecular beam epitaxy (MBE) at substrate temperature of Ts = 450°C, Piezoelectric photoacoustic (PPA) spectra were measured at liquid nitrogen and room temperatures. Two signals due to the non-radiative carrier recombination that correspond to bandgap energies of CIS and GaAs substrate were obtained. After illuminating with secondary light (λ = 1100 nm), two additional PPA peaks were observed for the CIS film at liquid nitrogen temperature. These signals are due to intrinsic defects in the Cu-rich CIS film.

KW - CuInSe (CIS)

KW - Materials

KW - PZT

KW - Photoacoustic spectra

KW - Thin film

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U2 - 10.1016/S0040-6090(98)01679-4

DO - 10.1016/S0040-6090(98)01679-4

M3 - Article

AN - SCOPUS:0032624429

SN - 0040-6090

VL - 343-344

SP - 591

EP - 593

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -