Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

K. Uchida, J. Koga, R. Ohba, S. Takagi, A. Toriumi

    Research output: Contribution to conferencePaper

    2 Citations (Scopus)

    Abstract

    A hyper-thin SOI memory device that has both conduction channel and storage islands at the lower gate voltage is demonstrated. It shows both Coulomb staircase and oscillations at 20 K. By using coexistence of memory with Coulomb blockade effects, the Coulomb oscillation phase is well controlled. This will open a way to the robust nano-structure devices, including the functional devices for multi-value memory/logic.

    Original languageEnglish
    Pages138-139
    Number of pages2
    Publication statusPublished - 1999 Dec 1
    EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
    Duration: 1999 Jun 281999 Jun 30

    Other

    OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
    CitySanta Barbara, CA, USA
    Period99/6/2899/6/30

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Uchida, K., Koga, J., Ohba, R., Takagi, S., & Toriumi, A. (1999). Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film. 138-139. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .