Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

K. Uchida; J. Koga; R. Ohba; S. Takagi; A. Toriumi

Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

K. Uchida, J. Koga, R. Ohba, S. Takagi, A. Toriumi

Research output: Contribution to conference › Paper › peer-review

Abstract

A hyper-thin SOI memory device that has both conduction channel and storage islands at the lower gate voltage is demonstrated. It shows both Coulomb staircase and oscillations at 20 K. By using coexistence of memory with Coulomb blockade effects, the Coulomb oscillation phase is well controlled. This will open a way to the robust nano-structure devices, including the functional devices for multi-value memory/logic.

Original language	English
Pages	138-139
Number of pages	2
Publication status	Published - 1999 Dec 1
Event	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: 1999 Jun 28 → 1999 Jun 30

Other

Other	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
City	Santa Barbara, CA, USA
Period	99/6/28 → 99/6/30

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film",

abstract = "A hyper-thin SOI memory device that has both conduction channel and storage islands at the lower gate voltage is demonstrated. It shows both Coulomb staircase and oscillations at 20 K. By using coexistence of memory with Coulomb blockade effects, the Coulomb oscillation phase is well controlled. This will open a way to the robust nano-structure devices, including the functional devices for multi-value memory/logic.",

author = "K. Uchida and J. Koga and R. Ohba and S. Takagi and A. Toriumi",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "138--139",

note = "Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) ; Conference date: 28-06-1999 Through 30-06-1999",

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T1 - Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

AU - Uchida, K.

AU - Koga, J.

AU - Ohba, R.

AU - Takagi, S.

AU - Toriumi, A.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A hyper-thin SOI memory device that has both conduction channel and storage islands at the lower gate voltage is demonstrated. It shows both Coulomb staircase and oscillations at 20 K. By using coexistence of memory with Coulomb blockade effects, the Coulomb oscillation phase is well controlled. This will open a way to the robust nano-structure devices, including the functional devices for multi-value memory/logic.

AB - A hyper-thin SOI memory device that has both conduction channel and storage islands at the lower gate voltage is demonstrated. It shows both Coulomb staircase and oscillations at 20 K. By using coexistence of memory with Coulomb blockade effects, the Coulomb oscillation phase is well controlled. This will open a way to the robust nano-structure devices, including the functional devices for multi-value memory/logic.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033358912&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033358912

SP - 138

EP - 139

T2 - Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)

Y2 - 28 June 1999 through 30 June 1999

ER -

Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

Abstract

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ASJC Scopus subject areas

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