Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film

K. Uchida, J. Koga, R. Ohba, S. Takagi, A. Toriumi

Research output: Contribution to conferencePaper

Abstract

A hyper-thin SOI memory device that has both conduction channel and storage islands at the lower gate voltage is demonstrated. It shows both Coulomb staircase and oscillations at 20 K. By using coexistence of memory with Coulomb blockade effects, the Coulomb oscillation phase is well controlled. This will open a way to the robust nano-structure devices, including the functional devices for multi-value memory/logic.

Original languageEnglish
Pages138-139
Number of pages2
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 1999 Jun 281999 Jun 30

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Uchida, K., Koga, J., Ohba, R., Takagi, S., & Toriumi, A. (1999). Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film. 138-139. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .